Semiconductor laser apparatus and semiconductor laser device

A semiconductor laser apparatus, comprising:

• a semiconductor laser device for junction-down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate;
• and
• a submount having a mounting surface on which a first metal film pattern and a second metal film pattern are formed, wherein:
• the first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which a one-conductivity-type semiconductor layer of one conductivity type, an active layer, and an other-conductivity-type semiconductor layer of an other conductivity type different from the one conductivity type are stacked in stated order,
• the first light-emitting device region includes a first electrode film located on the one-conductivity-type semiconductor layer,
• the second light-emitting device region includes a second electrode film located on the other-conductivity-type semiconductor layer,
• the first electrode film and the second electrode film are electrically connected to each other,
• the first light-emitting device region and the second light-emitting device region in the semiconductor laser device are joined respectively to the first metal film pattern and the second metal film pattern,
• a protective film is formed from a laser light emission end surface of the semiconductor laser device through to an end surface of the submount parallel to the laser light emission end surface.

A semiconductor laser apparatus, comprising:

• a semiconductor laser device for junction-down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate;
• and
• a submount having a mounting surface on which a first metal film pattern and a second metal film pattern are formed, wherein:
• the first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which a one-conductivity-type semiconductor layer of one conductivity type, an active layer, and an other-conductivity-type semiconductor layer of an other conductivity type different from the one conductivity type are stacked in stated order,
• the first light-emitting device region includes a first electrode film located on the one-conductivity-type semiconductor layer,
• the second light-emitting device region includes a second electrode film located on the other-conductivity-type semiconductor layer,
• the first electrode film and the second electrode film are electrically connected to each other,
• the first light-emitting device region and the second light-emitting device region in the semiconductor laser device are joined respectively to the first metal film pattern and the second metal film pattern,
• the semiconductor laser device includes a plurality of light-emitting device regions including the first light-emitting device region and the second light-emitting device region,
• the submount includes a plurality of metal film patterns including the first metal film pattern and the second metal film pattern,
• the plurality of light-emitting device regions are connected to respective metal film patterns from among the plurality of metal film patterns, and
• when a total number of the plurality of light-emitting device regions is n, a total number of the plurality of metal film patterns is n+1.

A semiconductor laser apparatus, comprising:

• a semiconductor laser device for junction-down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate, wherein:
• the first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which a one-conductivity-type semiconductor layer of one conductivity type, an active layer, and an other-conductivity-type semiconductor layer of an other conductivity type different from the one conductivity type are stacked in stated order,
• the first light-emitting device region includes a first electrode film located on the one-conductivity-type semiconductor layer,
• the second light-emitting device region includes a second electrode film located on the other-conductivity-type semiconductor layer,
• the first electrode film and the second electrode film are electrically connected to each other, and
• the other-conductivity-type semiconductor layer includes a ridge having a width smaller than a width of the other-conductivity-type semiconductor layer, a center of the ridge in a width direction is located closer to the first electrode film than a center of the other-conductivity-type semiconductor layer in the width direction is, in the first light-emitting device region.