Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition

A method of making a double heterostructure semiconductor laser, comprising the following steps:

• forming by liquid phase epitaxial growth on a semiconductor substrate of a III-V compound crystal of a first conductivity type, a first semiconductor region of a III-V compound mixed crystal of said first conductivity type,
• forming thereon by liquid phase epitaxial growth a second region of III-V compound crystal, to form a light-emitting active region,
• forming thereon by liquid phase epitaxial growth a third region of III-V compound mixed crystal of a second conductivity type, which is opposite to said first conductivity type,
• forming thereon by liquid phase epitaxial growth method a fourth region of III-V compound crystal of said second conductivity type,
• etching specified parts of the resultant wafer from the surface of the fourth region to a depth of midway of said first region, thereby to form at least one recess, and
• forming a high resistivity polycrystalline semiconductor region by vapor phase reaction at a relatively low temperature to fill said recess.