Semiconductor laser apparatus and semiconductor laser device

A semiconductor laser device having a stack structure in which a one-conductivity-type semiconductor layer of one conductivity type, an active layer, and an other-conductivity-type semiconductor layer of an other conductivity type different from the one conductivity type are stacked in stated order on a substrate, the semiconductor laser device comprising:

• a first light-emitting device region and a second light-emitting device region formed separately and each including the stack structure;
• and
• a first electrode film located on the one-conductivity-type semiconductor layer in the first light-emitting device region and a second electrode film located on the other-conductivity-type semiconductor layer in the second light-emitting device region,
• wherein the first electrode film end the second electrode film are electrically connected to each other,
• a separation region is located between the first light-emitting device region and the second light-emitting device region, the separation region being a region at which the one-conductivity-type semiconductor layer in the first light-emitting device region and the one-conductivity-type semiconductor layer in the second light-emitting device region are separated,
• in the separation region, a groove portion is provided in the substrate, and
• a current stop layer is located between the one-conductivity-type semiconductor layer in the first light-emitting device region and the substrate.