Compound semiconductor light-emitting device of gallium nitride series

A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N:

• x1+y1+z1=1, 0.ltoreq.x1, y1, z1.ltoreq.1) comprising:
• an n-type semiconductor layer having at least an n-type clad layer;
• an active layer formed on said n-type semiconductor layer;
• a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer;
• a smoothing layer of Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0<y2.ltoreq.1) formed in said active layer;
• a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto;
• an alloy layer, made of Pt-semiconductor, selectively formed on a surface of said p-type contact layer;
• a p-side electrode, containing a layered structure made of a Pt layer formed on said alloy layer, a Ti layer containing TiN, thereon, and a Ti layer thereon;
• and
• an n-side electrode electrically connected with said n-type semiconductor layer.

A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N:

• x1+y1+z1=1, 0.ltoreq.x1, y1, z1<1) comprising:
• an n-type-semiconductor layer having at least an n-type clad layer:
• an active layer, formed on said n-type semiconductor layer, having a multi-quantum well structure having well layers, formed of at least Ga.sub.x3 In.sub.y3 Al.sub.z3 N (x3+y3+z3=1, 0.ltoreq.x3, y3, z3.ltoreq.1) and barrier layers, formed of Ga.sub.x4 In.sub.y4 Al.sub.z4 N (x4+y4+z4=1, 0.ltoreq.x4, y4, z4.ltoreq.1), alternatively layered;
• a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer;
• a smoothing layer of Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2<1, 0<y2.ltoreq.1) formed in said p-type semiconductor layer;
• a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto;
• a p-side electrode formed on said p-type contact layer;
• and
• an n-side electrode electrically connected with said n-type semiconductor layer, wherein said Ga.sub.x2 In.sub.y2 Al.sub.z2 N smoothing layer is formed to be thicker than the thickness of said well layer when In composition y2 is lower than In composition y3 of said well layer.

A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N:

• x1+y1+z1=1, 0.ltoreq.x1, y1, z1.ltoreq.1)comprising:
• an n-type semiconductor layer having at least an n-type clad layer;
• an active layer, formed on said n-type semiconductor layer, having a multi-quantum well structure having well layers, formed of at least Ga.sub.x3 In.sub.y3 Al.sub.z3 N (x3+y3+z3=1, 0.ltoreq.x3, y3, z3.ltoreq.1), and barrier layers, formed of Ga.sub.x4 In.sub.y4 Al.sub.z4 N (x4+y4+z4=1, 0.ltoreq.x4, y4, z4.ltoreq.1) alternatively layered:
• a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer;
• a smoothing layer of Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0<y2.ltoreq.1) formed in said p-type semiconductor layer;
• a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto;
• a p-side electrode formed on said p-type contact layer;
• and
• an n-side electrode electrically connected with said n-type semiconductor layer, wherein said n-type semiconductor layer, wherein said Ga.sub.x2 In.sub.y2 Al.sub.z2 N smoothing layer is formed to be thinner than the thickness of said well layer when In composition y2 is higher than In composition y3 of said well layer.

A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N:

• x1+y1+z1=1, 0.ltoreq.x1, y1, z1.ltoreq.1) (comprising:
• an n-type clad layer;
• an n-type waveguide layer formed on said n-type clad layer;
• an active layer formed on said waveguide layer;
• a p-type waveguide layer, formed on said active layer, having a stripe ridge;
• a block layer selectively formed on along a side portion of the ridge of said p-type waveguide layer;
• a smoothing layer of Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, x2, z2.ltoreq.1, 0<y2.ltoreq.1) formed on said block layer and the ridge of said p-type waveguide layer;
• a p-type clad layer formed on said Ga.sub.x2 In.sub.y2 Al.sub.z2 N smoothing layer;
• a p-type contact layer, formed on said p-type clad layer, having a p-type impurity added thereto;
• a p-side electrode formed on said p-type contact layer;
• and
• an n-side electrode electrically connected with said n-type semiconductor layer, wherein said block layer is formed of Ga.sub.x5 In.sub.y5 Al.sub.z5 N (x5+y5+z5=1, 0.ltoreq.x5, y5.ltoreq.1, 0.ltoreq.z5.ltoreq.1).

A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N:

• x1+y1+z1=1, 0.ltoreq.x1, y1, z1.ltoreq.1) comprising:
• an n-type clad layer;
• an n-type waveguide layer formed on said n-type clad layer;
• an active layer formed on said n-type waveguide layer;
• a p-type waveguide layer, formed on said active layer, having a stripe ridge;
• a block layer selectively formed on along a side portion of the ridge of said p-type waveguide layer;
• a smoothing layer of Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, x2, z2.ltoreq.1, 0<y2.ltoreq.1) formed on said block layer and the ridge of said p-type conductive layer;
• a p-type clad layer formed on said Ga.sub.x2 In.sub.y2 Al.sub.z2 N smoothing layer;
• a p-type contact layer, formed on said p-type clad layer, having a p-type impurity added thereto;
• a p-side electrode formed on said p-type contact layer;
• and
• an n-side electrode electrically connected with said n-type semiconductor layer, wherein said block layer is formed of Ga.sub.x5 In.sub.y5 Al.sub.z5 N (x5+y5+z5=1,0.ltoreq.x5, z5.ltoreq.1, 0<y5.ltoreq.1).

A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N:

• x1+y1+z1=1, 0.ltoreq.x1, y1, z1.ltoreq.1) comprising
• an n-type semiconductor layer having at least an n-type clad layer;
• an active layer formed on said n-type semiconductor layer;
• a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer;
• a smoothing layer of Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0<y2.ltoreq.1) formed in said p-type semiconductive layer;
• a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto;
• a p-side electrode formed on said p-type contact layer;
• and
• an n-side electrode electrically connected with said n-type semiconductor layer.

A compound semiconductor light-emitting device having a compound semiconductor (Ga.sub.x1 In.sub.y1 Al.sub.z1 N:

• x1+y1+z1=1, 0.ltoreq.x1, y1, z1.ltoreq.1) comprising:
• an n-type semiconductor layer having at least an n-type clad layer;
• an active layer formed on said n-type semiconductor layer;
• a p-type semiconductor layer, formed on said active layer, having at least a p-type clad layer;
• a smoothing layer of Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0<y2.ltoreq.1) formed in said p-type semiconductor layer;
• a p-type contact layer, formed on said p-type semiconductor layer, having a p-type impurity added thereto,
• an alloy layer, made of Pt-semiconductor, selectively formed on a surface of said p-type contact layer;
• a p-side electrode, containing a layered structure made of a Pt layer formed on said alloy layer, a Ti layer containing TiN, thereon, and a Ti layer thereon;
• and
• an n-side electrode electrically connected with said n-type semiconductor layer.