Method for forming group-III nitride semiconductor layer and group-III nitride semiconductor device
AssigneeNEC Corporation
InventorChiaki Sasaoka
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Abstract
A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partially etched non-crystal layer before the partially etched non-crystal layer is crystallized to form a partially etched nitride-based compound semiconductor crystal layer.
Claims51
A method of forming a partially etched nitride-based compound semiconductor crystal layer, said method including the steps of:
- forming a non-crystal layer of a nitride-based compound semiconductor;
- etching at least a part of said non-crystal layer to form a partially etched non-crystal layer;
- and
- crystallizing said partially etched non-crystal layer to form a partially etched nitride-based compound semiconductor crystal layer.
A method of forming a nitride-based compound semiconductor multi-layer structure, said method including the steps of:
- forming a non-crystal layer of a nitride-based compound semiconductor on a base layer;
- having oxygen present at least either over or in said non-crystal layer;
- selectively etching said non-crystal layer to form at least an opening, thereby to form a partially etched non-crystal layer;
- and
- crystallizing said partially etched non-crystal layer in the presence of oxygen, for forming a partially etched nitride-based compound semiconductor crystal layer, as well as for allowing the presence of oxygen to suppress a mass-transport of at least one kind of atom of said nitride-based compound semiconductor.
A method of forming a partially etched nitride-based compound semiconductor crystal layer, said method including the steps of:
- forming a non-crystal layer of a nitride-based compound semiconductor at such a first temperature that said non-crystal layer comprises an amorphous structure or a locally micro-crystallized amorphous structure;
- etching at least a part of said non-crystal layer to form a partially etched non-crystal layer;
- and
- forming an additional compound semiconductor crystal layer over said partially etched non-crystal layer at a second temperature higher than said first temperature, wherein said second temperature causes said partially etched non-crystal layer to be crystallized, to form a partially etched nitride-based compound semiconductor crystal layer, which comprises at least one of a single crystal structure and a polycrystal structure.
Dependencies are inferred from the claim text.