Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same
AssigneeSharp Kabushiki Kaisha
InventorsToshio Hata, Shigetoshi Ito
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Abstract
A semiconductor light emitting device includes: a substrate; a contact layer made of a gallium nitride based compound semiconductor formed on the substrate; a stripe-shaped conductive selective growth mask formed above the contact layer; and a layered structure made of a gallium nitride based compound semiconductor. The layered structure includes at least a pair of cladding layers, formed on the conductive selective growth mask, and an active layer, including at least one layer, sandwiched by the cladding layers.
Claims9
A semiconductor light emitting device comprising:
- a substrate;
- a contact layer made of a gallium nitride based compound semiconductor formed on the substrate;
- a stripe-shaped conductive selective growth mask formed above the contact layer;
- and
- a layered structure made of a gallium nitride based compound semiconductor, the layered structure including at least a pair of cladding layers, formed on the conductive selective growth mask, and an active layer, including at least one layer, sandwiched by the cladding layers.
A method for fabricating a semiconductor light emitting device comprising the steps of:
- forming a contact layer made of a gallium nitride based compound semiconductor on a substrate;
- forming a conductive selective growth mask and an insulating selective growth mask on the contact layer;
- and
- forming a layered structure, made of a gallium nitride based compound semiconductor, above the conductive selective growth mask, the insulating selective growth mask, and the contact layer, the layered structure including at least a pair of cladding layers and an active layer.
Dependencies are inferred from the claim text.