H01S 5/221
Containing aluminium
Official title: {containing aluminium}
H01S5/221 (Containing aluminium) appears on 128 US grants and 98 published applications in this corpus.
Search patents in H01S- Granted patents
- 128
- Published applications
- 98
- Assignees
- 51
- Inventors
- 276
- Latest grant
- 7 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 5 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 1 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 7 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 5 |
| 2003 | 7 | 4 |
| 2004 | 6 | 6 |
| 2005 | 6 | 7 |
| 2006 | 5 | 5 |
| 2007 | 5 | 12 |
| 2008 | 0 | 7 |
| 2009 | 5 | 5 |
| 2010 | 11 | 4 |
| 2011 | 2 | 3 |
| 2012 | 2 | 2 |
| 2013 | 4 | 1 |
| 2014 | 3 | 1 |
| 2015 | 3 | 10 |
| 2016 | 7 | 2 |
| 2017 | 2 | 3 |
| 2018 | 2 | 3 |
| 2019 | 3 | 6 |
| 2020 | 4 | 3 |
| 2021 | 3 | 3 |
| 2022 | 1 | 2 |
| 2023 | 2 | 0 |
| 2024 | 1 | 2 |
| 2025 | 2 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor light-emitting element and method of fabricating semiconductor light-emitting element7 Oct 2025US 12,438,342 B2Nuvoton Technology Corporation Japan
- Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth12 Aug 2025US 12,389,714 B2The Regents of the University of California
- Gain-guided semiconductor laser and method of manufacturing the same14 May 2024US 11,984,704 B2OSRAM OLED GmbH
- Light-emitting element and method for manufacturing the same23 May 2023US 11,658,463 B2Sony Group Corporation
- Semiconductor laser device10 Jan 2023US 11,552,451 B2Mitsubishi Electric Corporation
- Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component18 Sep 2025US 2025/0293483 A1ams-OSRAM International GmbH
- Nitride light-emitting element13 Mar 2025US 2025/0087971 A1Panasonic Holdings Corporation
- Nitride semiconductor light-emitting device28 Nov 2024US 2024/0396304 A1Nuvoton Technology Corporation Japan
- Nitride semiconductor laser element18 Jul 2024US 2024/0243553 A1Ushio Denki Kabushiki Kaisha
- Semiconductor light-emitting element and method of fabricating semiconductor light-emitting element4 Aug 2022US 2022/0247156 A1Nuvoton Technology Corporation Japan
Most cited
By later US patents
- Compound semiconductor light-emitting device of gallium nitride series84US 6,067,309 AKabushiki Kaisha Toshiba · 2000
- Laser diode and semiconductor light-emitting device producing visible-wavelength radiation75US 6,614,821 B1Ricoh Company, Ltd. · 2003
- Light emitting device with cap layer51US 5,990,496 ASanyo Electric Co., Ltd. · 1999
- Radiation-emitting index-guided semiconductor diode36US 5,812,578 AU. S. Philips Corporation · 1998
- Low operating current and low noise semiconductor laser device for optical disk memories33US 5,386,429 AMatsushita Electric Industrial Co., Ltd. · 1995