Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth

A method of fabricating a semiconductor device, comprising:

• forming a growth restrict mask on or above a III-nitride substrate, wherein:
• the III-nitride substrate has an in-plane distribution of off-angle orientations with more than 0.1 degrees;
• and
• the off-angle orientations of an m-plane oriented crystalline surface plane ranges from about +28 degrees to about −47 degrees towards a c-plane;
• and
• growing one or more island-like III-nitride semiconductor layers on the III-nitride substrate using the growth restrict mask;
• wherein:
• the island-like III-nitride semiconductor layers have a just-orientation of an m-plane oriented crystalline surface plane towards an a-axis;
• the island-like III-nitride semiconductor layers have the off-angle orientations of the m-plane oriented crystalline surface plane ranges from about +28 degrees to about −47 degrees towards a c-plane;
• the island-like III-nitride semiconductor layers have at least one long side and short side, wherein the long side is perpendicular to an a-axis of the island-like III-nitride semiconductor layers;
• the island-like III-nitride semiconductor layers have an edge growth region at the short side of the island-like III-nitride semiconductor layers where growth of the island-like III-nitride semiconductor layers is restricted with a height less than 0.2 μm;
• the island-like III-nitride semiconductor layers have a flat surface region without hillocks.