Light emitting device with cap layer
AssigneeSanyo Electric Co., Ltd.
InventorsTatsuya Kunisato, Takashi Kano, Yasuhiro Ueda, Yasuhiko Matsushita, Katsumi Yagi
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Abstract
A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type.
Claims15
A light emitting device comprising, in this order:
- a first cladding layer composed of a compound semiconductor of a first conductivity type;
- an active layer composed of a compound semiconductor containing indium;
- a cap layer composed of a compound semiconductor;
- and
- a second cladding layer composed of a compound semiconductor of a second conductivity type, wherein said cap layer has a lower impurity concentration than said second cladding layer.
Dependencies are inferred from the claim text.