Semiconductor light-emitting element and method of fabricating semiconductor light-emitting element

A semiconductor light-emitting element comprising:

• a light emission layer including a group III nitride semiconductor;
• an electron barrier layer disposed above the light emission layer and including a group III nitride semiconductor containing Al;
• and
• a clad layer disposed above and in contact with the electron barrier layer, wherein:
• the electron barrier layer and the clad layer contain Mg as a dopant,
• the clad layer includes a high carbon concentration region containing carbon and a low carbon concentration region having a carbon concentration lower than a carbon concentration of the high carbon concentration region, in a stated order from an electron barrier layer side, and
• the high carbon concentration region includes a decrease region in which an Mg concentration decreases with an increase in distance from the electron barrier layer.

A semiconductor light-emitting element comprising:

• a light emission layer including a group III nitride semiconductor;
• an electron barrier layer disposed above the light emission layer and including a group III nitride semiconductor containing Al;
• and
• a clad layer disposed above and in contact with the electron barrier layer, wherein:
• the electron barrier layer and the clad layer contain Mg as a dopant,
• the clad layer includes a high carbon concentration region containing carbon and a low carbon concentration region having a carbon concentration lower than a carbon concentration of the high carbon concentration region, in a stated order from an electron barrier layer side, and
• the clad layer includes a low Mg concentration region containing Mg and a high Mg concentration region disposed above the low Mg concentration region and having an Mg concentration higher than an Mg concentration of the low Mg concentration region.