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AssigneeU.S. Philips Corporation
InventorsMarcel F. C. Schemmann, Carolus J. Van Der Poel, Gerard A. Acket
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A radiation-emitting semiconductor diode, especially a laser having a first and a second cladding layer, an active layer and a mesa which comprises at least the second cladding layer and which lies recessed in a third cladding layer. The second cladding layer comprises a first sub-layer which adjoins the active layer and is comparatively thin, and a second sub-layer which adjoins the first sub-layer and is comparatively thick, while the refractive index of the first sub-layer is lower than that of the second sub-layer. Confinement in the thickness direction of charge carriers and radiation is good in such a diode, while the third cladding layer has a relatively high refractive index (giving a relatively low bandgap). Thus, the third cladding layer has a relatively low aluminium content, while providing good lateral confinement.
A radiation-emitting semiconductor diode comprising a semiconductor body with a semiconductor substrate on which a semiconductor layer structure is present comprising a first cladding layer of a first conductivity type, an active layer, and a second cladding layer of a second conductivity type opposed to the first, while the substrate and the second cladding layer are provided with electrical connections and a strip-shaped region is present which comprises a major portion of the second cladding layer and which is laterally bounded on either side by a third cladding layer, characterized in that the second cladding layer comprises a first sub-layer which adjoins the active layer and is comparatively thin and a second sub-layer which adjoins the first sub-layer and which is comparatively thick, the refractive index of the first sub-layer being lower than that of the second sub-layer, the refractive index of the third cladding layer lying between those of the first and the second sub-layers of the second cladding layer.
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