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US 2024/0243553 A1Published application
Nitride semiconductor laser element
AssigneeUshio Denki Kabushiki Kaisha
InventorKoichi NANIWAE
Life of this patent
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Abstract
In a nitride semiconductor laser element, a first epilayer including an active layer, a current confinement layer having an opening portion, and a second epilayer are formed on a semiconductor substrate. The first epilayer has an impurity concentration maximum portion where a concentration distribution of an impurity in a depth direction shows a local maximum near an interface with the current confinement layer.
Claims11
A nitride semiconductor laser element comprising
- a first epitaxial layer including an active layer, a current confinement layer having an opening portion, and a second epitaxial layer formed on a semiconductor substrate, wherein
- the current confinement layer has an impurity concentration maximum portion where a concentration distribution of an impurity in a depth direction shows a local maximum near an interface with the first epitaxial layer.
Dependencies are inferred from the claim text.