Nitride semiconductor light-emitting device

A nitride semiconductor light-emitting element comprising:

• an N-type cladding layer;
• an N-side guide layer disposed above the N-type cladding layer;
• an active layer disposed above the N-side guide layer;
• a first P-side guide layer disposed above the active layer;
• an electron barrier layer disposed above the first P-side guide layer;
• a second P-side guide layer disposed above the electron barrier layer;
• and
• a P-type cladding layer disposed above the second P-side guide layer,
• wherein an average band gap energy of the second P-side guide layer is greater than an average band gap energy of the first P-side guide layer,
• a thickness of the second P-side guide layer is greater than a thickness of the first P-side guide layer, and
• an average band gap energy of the P-type cladding layer is less than an average band gap energy of the electron barrier layer.

A nitride semiconductor light-emitting element comprising:

• an N-type cladding layer;
• an N-side guide layer disposed above the N-type cladding layer;
• an active layer disposed above the N-side guide layer;
• a first P-side guide layer disposed above the active layer;
• an electron barrier layer disposed above the first P-side guide layer;
• a second P-side guide layer disposed above the electron barrier layer;
• and
• a P-type cladding layer disposed above the second P-side guide layer,
• wherein an average band gap energy of the second P-side guide layer is greater than an average band gap energy of the first P-side guide layer,
• an impurity concentration of an end portion of the P-type cladding layer closer to the active layer is lower than an impurity concentration of an end portion of the P-type cladding layer farther from the active layer, and
• an average band gap energy of the P-type cladding layer is less than an average band gap energy of the electron barrier layer.