Gain-guided semiconductor laser and method of manufacturing the same

A semiconductor laser with a semiconductor layer sequence and with electrical contact pads, wherein

• the semiconductor layer sequence comprises an active zone for radiation generation, at least one waveguide layer at the active zone, and at least one cladding layer,
• the semiconductor layer sequence further comprises at least one current diaphragm layer which comprises electrically conductive material along a resonator axis of the semiconductor laser in a central region and comprises an electrically insulating material in edge regions directly adjoining the central region,
• transversely to the resonator axis the central region comprises a width of at least 10 μm and the edge regions each comprise at least a minimum width
• the minimum width is 3 μm or more, and
• seen in plan view, the semiconductor layer sequence and the electrical contact pads in the central region and at least up to the minimum width in the direction transverse to the resonator axis on a side of the current diaphragm layer facing away from the active zone are continuous components extending on both sides beyond the central region, and
• a trench extends on each side along the resonator axis and the trenches expose the current diaphragm layer laterally and cut through the entire semiconductor layer sequence to a substrate, and
• the trenches are configured to suppress parasitic modes, so that the trenches comprise side surfaces extending obliquely to a growth direction of the semiconductor layer sequence.