H01J 37/32678
Electron cyclotron resonance
Official title: {Electron cyclotron resonance}
H01J37/32678 (Electron cyclotron resonance) appears on 270 US grants and 133 published applications in this corpus.
Search patents in H01J- Granted patents
- 270
- Published applications
- 133
- Assignees
- 132
- Inventors
- 530
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 5 | 0 |
| 1990 | 10 | 0 |
| 1991 | 13 | 0 |
| 1992 | 10 | 0 |
| 1993 | 15 | 0 |
| 1994 | 21 | 0 |
| 1995 | 15 | 0 |
| 1996 | 10 | 0 |
| 1997 | 9 | 0 |
| 1998 | 6 | 0 |
| 1999 | 10 | 0 |
| 2000 | 22 | 0 |
| 2001 | 17 | 1 |
| 2002 | 10 | 8 |
| 2003 | 4 | 9 |
| 2004 | 9 | 6 |
| 2005 | 5 | 8 |
| 2006 | 5 | 7 |
| 2007 | 2 | 4 |
| 2008 | 3 | 2 |
| 2009 | 4 | 4 |
| 2010 | 2 | 13 |
| 2011 | 4 | 3 |
| 2012 | 1 | 5 |
| 2013 | 3 | 2 |
| 2014 | 5 | 3 |
| 2015 | 3 | 4 |
| 2016 | 2 | 3 |
| 2017 | 2 | 2 |
| 2018 | 4 | 9 |
| 2019 | 6 | 8 |
| 2020 | 4 | 6 |
| 2021 | 8 | 4 |
| 2022 | 2 | 7 |
| 2023 | 3 | 3 |
| 2024 | 4 | 2 |
| 2025 | 2 | 5 |
| 2026 | 1 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Low pressure plasma etch process for preferential generation of oxide residue and applications for the same14 Jul 2026US 12,685,052 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Plasma processing apparatus14 Oct 2025US 12,444,582 B2Hitachi High-Tech Corporation
- Plasma processing apparatus1 Jul 2025US 12,347,656 B2Hitachi High-Tech Corporation
- Method of manufacturing a semiconductor device10 Dec 2024US 12,165,873 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Singapore diamond preparation method25 Jun 2024US 12,018,362 B2Shanghai Zhengshi Technology Co., Ltd.
- Low pressure plasma etch process for preferential generation of oxide residue and applications for the same8 Oct 2026US 2026/0314283 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Plasma processing method9 Jul 2026US 2026/0196449 A1Hitachi High-Tech Corporation
- Plasma processing apparatus and plasma processing method11 Jun 2026US 2026/0162946 A1Hitachi High-Tech Corporation
- Plasma processing apparatus and plasma processing method4 Jun 2026US 2026/0155340 A1Hitachi High-Tech Corporation
- Ru etching induced by electron beam irradiation and remote plasma28 May 2026US 2026/0148934 A1University of Maryland, College Park
Most cited
By later US patents
- Plasma processing apparatus400US 6,433,298 B1Tokyo Electron Limited · 2002
- Microwave enhanced CVD system under magnetic field373US 5,512,102 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Microwave enhanced CVD system under magnetic field359US 6,230,650 B1Semiconductor Energy Laboratory Co.Ltd. · 2001
- Microwave plasma film deposition system353US 5,125,358 AMatsushita Electric Industrial Co., Ltd. · 1992
- Coupled microwave ECR and radio-frequency plasma source for plasma processing261US 5,292,370 AMartin Marietta Energy Systems, Inc. · 1994