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US 5,512,102 AGranted
Microwave enhanced CVD system under magnetic field
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to the CVDs.
Claims16
A plasma processing apparatus:
- a chamber;
- a gas introducing means for introducing a process gas into the chamber;
- a means for emitting a microwave into the chamber;
- a means for inducing a magnetic field in the chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma;
- a substrate having a surface to be treated placed in the chamber;
- exhaust means for exhausting said chamber, said exhaust means including a turbo-molecular pump interposed between the chamber and a vacuum pump;
- and
- a control valve interposed between the chamber and the turbo-molecular pump for controlling the pressure within the chamber.
5 more elements
A plasma processing apparatus comprising:
- a plasma forming chamber;
- a gas introducing means for introducing a process gas into the plasma forming chamber;
- a means for emitting a microwave into the plasma forming chamber;
- a means for inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma;
- an object treatment chamber adjoining the plasma forming chamber;
- a substrate having a surface to be treated placed in the object treatment chamber;
- exhaust means for exhausting said object treatment chamber, said exhaust means including a turbo-molecular pump interposed between the object treatment chamber and a vacuum pump and a control valve interposed between the object treatment chamber and the turbo-molecular pump for controlling the pressure within the object treatment chamber.
4 more elements
A plasma processing method comprising:
- introducing a process gas into a chamber;
- emitting a microwave into the chamber;
- inducing a magnetic field in the chamber with a magnetic field inducing means to form an electron cyclotron resonance in order to convert said process gas to a plasma;
- positioning a substrate having a surface to be treated in the chamber;
- and
- exhausting said chamber with an exhaust means including a turbo-molecular pump interposed between the chamber and a vacuum pump and controlling the pressure in the chamber with a control valve interposed between the chamber and the turbo-molecular pump.
3 more elements
A plasma processing method comprising:
- introducing a process gas into a plasma forming chamber;
- emitting a microwave into the plasma forming chamber;
- inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma;
- providing an object treatment chamber adjoining the plasma forming chamber;
- positioning a substrate having a surface to be treated in the object treatment chamber;
- exhausting said object treatment chamber with an exhaust means including a turbo-molecular pump interposed between the object treatment chamber and a vacuum pump and controlling the pressure in the object treatment chamber with a control valve interposed between the object treatment chamber and the turbo-molecular pump.
3 more elements
Dependencies are inferred from the claim text.