Plasma processing apparatus and plasma processing method
AssigneeHitachi High-Tech Corporation
InventorsTetsuo KAWANABE, Makoto SATAKE
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AssigneeHitachi High-Tech Corporation
InventorsTetsuo KAWANABE, Makoto SATAKE
Estimating the term…
In the present disclosure, in a plasma processing apparatus using ECR, information including parameters of a position and a shape of an ECR surface is used as an input value to a control device of the plasma processing apparatus. The ECR surface information that can be input to the control device from an input device of the plasma processing apparatus is limited by a discharge stability reference that is determined separately. When the discharge stability reference is satisfied, a plurality of coil current value candidates are extracted from a database including a correlation between a plurality of coil current values and the ECR surface shape information, and the plurality of coil current values to be input to a plurality of coils are determined from the plurality of coil current value candidates according to a coil current selection reference.
A plasma processing apparatus comprising:
A plasma processing method using a plasma processing apparatus including a processing chamber configured to allow a sample to be plasma-processed, a radio frequency power supply configured to supply radio frequency power of microwave for generating plasma, a plurality of coils configured to form a magnetic field in the processing chamber, a coil power supply configured to cause a current to flow through each of the coils, and a sample stage configured to allow the sample to be placed, the plasma processing method comprising:
Dependencies are inferred from the claim text.