Plasma processing apparatus and plasma processing method

A plasma processing apparatus, characterized by comprising:

• a processing chamber in which a plasma processing is applied to a processed substrate;
• a radio frequency power supply configured to supply a microwave power through a waveguide;
• a dielectric plate disposed above the processing chamber and permeable by the microwave;
• a sample stage on which the processed substrate is placed;
• an electromagnet disposed to surround a periphery of the processing chamber and configured to generate a first static magnetic field;
• a static magnetic field generation device disposed below the processed substrate;
• and
• a control device configured to control the electromagnet, wherein
• the static magnetic field generation device generates a second static magnetic field in a direction to strengthen a static magnetic field included in the first static magnetic field and in parallel to a center axis of the processing chamber,
• the control device controls the electromagnet such that an angle of a magnetic field line of a third static magnetic field with respect to a processed surface of the processed substrate becomes a desired angle, and
• the third static magnetic field is a static magnetic field in which the first static magnetic field and the second static magnetic field are superimposed one another.