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US 2026/0148934 A1Published application
Ru ETCHING INDUCED BY ELECTRON BEAM IRRADIATION AND REMOTE PLASMA
AssigneeUniversity of Maryland, College Park
InventorsGottlieb S. Oehrlein, Yudong Li, Michael Hinshelwood
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Abstract
A system for etching a sample includes a vacuum chamber, an electron beam source, and a remote plasma source. The sample is simultaneously subjected to irradiation from the electron beam source and a reactive neutral flux from the remote plasma source to induce etching of a surface of the sample.
Claims20
A system for etching a sample comprising:
- a vacuum chamber;
- an electron beam source;
- and
- a remote plasma source;
- wherein the sample is simultaneously subjected to irradiation from the electron beam source and a reactive neutral flux from the remote plasma source to induce etching of a surface of the sample.
2 more elements
A method for etching a sample, the method comprising:
- exposing the sample in a vacuum chamber to simultaneous irradiation from an electron beam source and a reactive neutral flux from a remote plasma source to induce etching of a surface of the sample.
A system for etching a sample comprising:
- a vacuum chamber;
- an electron flood gun;
- a differential pumping unit;
- and
- a remote plasma source which utilizes electron cyclotron wave resonance and includes a neutralization plate to remove charged species from a reactive neutral flux generated by remote plasma, so only reactive neutrals remain;
- wherein the sample is simultaneously subjected to irradiation from the electron flood gun and the reactive neutrals from the remote plasma source to induce etching of a surface of the sample.
3 more elements
Dependencies are inferred from the claim text.