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US 6,230,650 B1Granted
Microwave enhanced CVD system under magnetic field
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to the CVDS.
Claims37
A plasma processing apparatus comprising:
- a resonance chamber;
- a gas introducing means for introducing a process gas into the resonance chamber;
- a means for emitting a microwave into the resonance chamber;
- a means for inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma;
- a reaction chamber connected above the resonance chamber wherein the plasma flows from the resonance chamber to the reaction chamber;
- a substrate having a surface to be treated placed in the reaction chamber, wherein said substrate is supported within said reaction chamber above said resonance chamber;
- and
- exhaust means for exhausting said reaction chamber, wherein a port of said exhaust means is positioned within said reaction chamber between said substrate and said resonance chamber.
5 more elements
A plasma processing apparatus comprising:
- a plasma forming resonance chamber;
- a gas introducing means for introducing a process gas into the plasma forming resonance chamber;
- a means for emitting a microwave into the plasma forming resonance chamber;
- a means for inducing a magnetic field in the plasma forming resonance chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma;
- an object treatment chamber adjoining the plasma forming resonance chamber above the plasma forming resonance chamber;
- a single substrate having a surface to be treated placed in the object treatment chamber wherein said substrate is supported within said object treatment chamber above a single opening of said plasma forming resonance chamber;
- exhaust means for exhausting said object treatment chamber, said exhaust means including a port positioned within said object treatment chamber between said substrate and said resonance chamber.
4 more elements
A plasma processing method comprising:
- introducing a process gas into a plasma forming chamber;
- emitting a microwave into the plasma forming chamber;
- inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma;
- providing an object treatment chamber adjoining the plasma forming chamber wherein said object treatment chamber is positioned above said plasma forming chamber;
- positioning a substrate having a surface to be treated in the object treatment chamber above said plasma forming chamber;
- exhausting said treatment chamber with an exhaust means wherein a port of said exhaust means is positioned between said substrate and said plasma forming chamber.
3 more elements
A plasma processing method comprising:
- introducing a process gas into a plasma forming chamber;
- emitting a microwave into the plasma forming chamber;
- inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma;
- providing an object treatment chamber adjoining the plasma forming chamber wherein said object treatment chamber is positioned above said plasma forming chamber;
- positioning a single substrate having a surface to be treated in the object treatment chamber wherein said substrate is supported within said object treatment chamber above a single opening of said plasma forming resonance chamber;
- exhausting said treatment chamber with an exhaust means wherein a port of said exhaust means is positioned between said substrate and said plasma forming chamber.
3 more elements
A plasma CVD apparatus:
- a resonance chamber;
- a means for emitting a microwave into the resonance chamber;
- a means for inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- a reaction chamber connected above the resonance chamber wherein the plasma flows from the resonance chamber to the reaction chamber;
- a gas introducing means for introducing a reactive gas into said reaction chamber;
- a substrate having a surface to be treated placed in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward said resonance chamber;
- and
- exhaust means for exhausting said reaction chamber, wherein a port of said exhaust means is positioned within said reaction chamber between said substrate and said resonance chamber.
5 more elements
A plasma CVD apparatus:
- a resonance chamber;
- a means for emitting a microwave into the resonance chamber;
- a means for inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- a reaction chamber connected above the resonance chamber wherein the plasma flows from the resonance chamber to the reaction chamber;
- a gas introducing means for introducing a reactive gas into said reaction chamber;
- a single substrate having a surface to be treated placed in the reaction chamber wherein said substrate is arranged horizontally so that said surface faces toward a single opening of said resonance chamber;
- and
- exhaust means for exhausting said reaction chamber, wherein a port of said exhaust means is positioned within said reaction chamber between said substrate and said resonance chamber.
5 more elements
A plasma processing method comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber;
- introducing a reactive gas into said reaction chamber;
- positioning a substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward said resonance chamber;
- exhausting said reaction chamber with an exhaust means wherein a port of said exhaust means is positioned between said substrate and said resonance chamber;
- and
- depositing a film on the surface of said substrate by plasma CVD.
5 more elements
A plasma processing method comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber;
- introducing a reactive gas into said reaction chamber;
- positioning a single substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward a single opening of said resonance chamber;
- exhausting said reaction chamber with an exhaust means wherein a port of said exhaust means is positioned between said substrate and said resonance chamber;
- and
- depositing a film on the surface of said substrate by plasma CVD.
5 more elements
A plasma CVD apparatus:
- a resonance chamber;
- a means for emitting a microwave into the resonance chamber;
- a means for inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- a reaction chamber connected above the resonance chamber wherein said reaction chamber has a side wall which extends perpendicularly;
- a gas introducing means for introducing a reactive gas into said reaction chamber;
- a substrate having a surface to be treated placed in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward said resonance chamber;
- and
- exhaust means for exhausting said reaction chamber, wherein a port of said exhaust means is positioned on the side wall of said reaction chamber between said substrate and said resonance chamber.
5 more elements
A plasma CVD apparatus:
- a resonance chamber;
- a means for emitting a microwave into the resonance chamber;
- a means for inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- a reaction chamber connected above the resonance chamber wherein said reaction chamber has a side wall which extends perpendicularly;
- a gas introducing means for introducing a reactive gas into said reaction chamber;
- a single substrate having a surface to be treated placed in the reaction chamber wherein said substrate is arranged horizontally so that said surface faces toward a single opening of said resonance chamber;
- and
- exhaust means for exhausting said reaction chamber, wherein a port of said exhaust means is positioned within said reaction chamber between said substrate and said resonance chamber.
5 more elements
A plasma processing method comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is located above said resonance chamber and has a side wall which extends perpendicularly;
- introducing a reactive gas into said reaction chamber;
- positioning a substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward said resonance chamber;
- exhausting said reaction chamber with an exhaust means wherein a port of said exhaust means is positioned on said side wall between said substrate and said resonance chamber;
- and
- depositing a film on the surface of said substrate by plasma CVD.
5 more elements
A plasma processing method comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber and has a side wall which extends perpendicularly;
- introducing a reactive gas into said reaction chamber;
- positioning a single substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward a single opening of said resonance chamber;
- exhausting said reaction chamber with an exhaust means wherein a port of said exhaust means is positioned on said side wall between said substrate and said resonance chamber;
- and
- depositing a film on the surface of said substrate by plasma CVD.
5 more elements
Dependencies are inferred from the claim text.