H01J 37/3266
Magnetic control means
Official title: {Magnetic control means}
H01J37/3266 (Magnetic control means) appears on 1,189 US grants and 1,044 published applications in this corpus.
Search patents in H01J- Granted patents
- 1,189
- Published applications
- 1,044
- Assignees
- 413
- Inventors
- 2,531
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 5 | 0 |
| 1985 | 7 | 0 |
| 1986 | 8 | 0 |
| 1987 | 8 | 0 |
| 1988 | 8 | 0 |
| 1989 | 12 | 0 |
| 1990 | 17 | 0 |
| 1991 | 20 | 0 |
| 1992 | 19 | 0 |
| 1993 | 33 | 0 |
| 1994 | 41 | 0 |
| 1995 | 32 | 0 |
| 1996 | 27 | 0 |
| 1997 | 25 | 0 |
| 1998 | 26 | 0 |
| 1999 | 41 | 0 |
| 2000 | 66 | 0 |
| 2001 | 40 | 14 |
| 2002 | 46 | 34 |
| 2003 | 32 | 50 |
| 2004 | 37 | 62 |
| 2005 | 28 | 41 |
| 2006 | 19 | 31 |
| 2007 | 14 | 38 |
| 2008 | 24 | 35 |
| 2009 | 19 | 31 |
| 2010 | 28 | 44 |
| 2011 | 25 | 43 |
| 2012 | 17 | 33 |
| 2013 | 27 | 45 |
| 2014 | 30 | 55 |
| 2015 | 35 | 59 |
| 2016 | 37 | 56 |
| 2017 | 44 | 40 |
| 2018 | 40 | 36 |
| 2019 | 48 | 41 |
| 2020 | 43 | 40 |
| 2021 | 29 | 31 |
| 2022 | 26 | 38 |
| 2023 | 20 | 44 |
| 2024 | 32 | 36 |
| 2025 | 26 | 38 |
| 2026 | 24 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor process device including electromagnet for controlling plasma1 Sep 2026US 12,725,766 B2Samsung Electronics Co., Ltd.
- Plasma reaction apparatus14 Jul 2026US 12,683,130 B2New Power Plasma Co., Ltd.
- Low pressure plasma etch process for preferential generation of oxide residue and applications for the same14 Jul 2026US 12,685,052 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Target processing device and target processing method7 Jul 2026US 12,676,292 B2Kioxia Corporation
- Plasma processing apparatus and plasma control method7 Jul 2026US 12,676,293 B2Tokyo Electron Limited
- Low pressure plasma etch process for preferential generation of oxide residue and applications for the same8 Oct 2026US 2026/0314283 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing apparatus and substrate processing method24 Sep 2026US 2026/0290753 A1Tokyo Electron Limited
- Semiconductor processing equipment and control method thereof24 Sep 2026US 2026/0290762 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Plasma treatment vessel and plasma treatment device17 Sep 2026US 2026/0279737 A1Plasmapp Co., Ltd.
- Semiconductor process chamber and semiconductor process equipment30 Jul 2026US 2026/0218372 A1Beijing Naura Microelectronics Equipment Co., Ltd.
Most cited
By later US patents
- Dual plasma beam sources and method560US 7,411,352 B2Applied Process Technologies, Inc. · 2008
- Vacuum processing chamber having multi-mode access485US 6,095,083 AApplied Materiels, Inc. · 2000
- Systems, methods and apparatus for choked flow element extraction472US 9,449,793 B2Lam Research Corporation · 2016
- Multi-zone plasma processing method and apparatus454US 5,252,178 ATexas Instruments Incorporated · 1993
- Plasma processing apparatus400US 6,433,298 B1Tokyo Electron Limited · 2002