H01J 37/32669
Particular magnets or magnet arrangements for controlling the discharge
Official title: {Particular magnets or magnet arrangements for controlling the discharge}
H01J37/32669 (Particular magnets or magnet arrangements for controlling the discharge) appears on 251 US grants and 376 published applications in this corpus.
Search patents in H01J- Granted patents
- 251
- Published applications
- 376
- Assignees
- 136
- Inventors
- 816
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 2 |
| 2006 | 0 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 3 |
| 2009 | 0 | 1 |
| 2010 | 2 | 3 |
| 2011 | 0 | 6 |
| 2012 | 3 | 17 |
| 2013 | 5 | 21 |
| 2014 | 9 | 33 |
| 2015 | 16 | 33 |
| 2016 | 21 | 37 |
| 2017 | 28 | 23 |
| 2018 | 20 | 18 |
| 2019 | 21 | 15 |
| 2020 | 18 | 23 |
| 2021 | 17 | 21 |
| 2022 | 19 | 24 |
| 2023 | 11 | 28 |
| 2024 | 20 | 21 |
| 2025 | 18 | 26 |
| 2026 | 19 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Plasma processing apparatus and plasma control method7 Jul 2026US 12,676,293 B2Tokyo Electron Limited
- Shunt door for magnets in plasma process chamber23 Jun 2026US 12,662,737 B2APPLIED Materials.Inc.
- Substrate processing apparatus and substrate processing method24 Sep 2026US 2026/0290753 A1Tokyo Electron Limited
- Semiconductor processing equipment and control method thereof24 Sep 2026US 2026/0290762 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing apparatus and a method of processing a substrate using the same23 Jul 2026US 2026/0213135 A1Samsung Electronics Co., Ltd.
- Magnetically enhanced resistive and dielectric barrier discharge9 Jul 2026US 2026/0196440 A1APPLIED Materials.Inc.
- Substrate processing apparatus including electromagnet unit2 Jul 2026US 2026/0188629 A1Semes Co., Ltd.
Most cited
By later US patents
- Plasma processing apparatus347US 10,622,196 B2Tokyo Electron Limited · 2020
- Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma68US 6,471,822 B1APPLIED Materials.Inc. · 2002
- Magnetically enhanced, inductively coupled plasma source for a focused ion beam system55US 7,241,361 B2FEI Company · 2007
- Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy46US 10,773,282 B2Tokyo Electron Limited · 2020
- Magnetically enhanced, inductively coupled plasma source for a focused ion beam system43US 7,670,455 B2FEI Company · 2010