Substrate processing apparatus and substrate processing method

A substrate processing method for a substrate processing apparatus, the substrate processing method comprising:

• adjusting a plasma processing chamber in the substrate processing apparatus to a pressure within a range of 1 mTorr to 20 mTorr;
• supplying, by a first RF power supply, a source RF signal having a first RF frequency to an upper electrode located above a substrate support supporting a substrate;
• and
• supplying, by a second RF power supply, a bias RF signal having a second RF frequency to a lower electrode of the substrate support;
• repeating
• supplying the source RF signal to the upper electrode to generate plasma in the plasma processing chamber in a state in which a magnetic field is generated by an electromagnet in the plasma processing chamber and depositing a deposit on the substrate;
• and
• supplying the source RF signal to the upper electrode to generate plasma in the plasma processing chamber in a state in which a magnetic field is generated by the electromagnet in the plasma processing chamber and etching the substrate,
• wherein a power level of the source RF signal in the etching the substrate is lower than a power level of the source RF signal in the depositing the deposit on the substrate.

A non-transitory computer-readable medium storing executable instructions, which when executed by controller circuitry, causes the controller circuitry to execute a method, the method comprising:

• adjusting a plasma processing chamber in a substrate processing apparatus to a pressure within a range of 1 mTorr to 20 mTorr;
• supplying, by a first RF power supply, a source RF signal having a first RF frequency to an upper electrode located above a substrate support supporting a substrate;
• and
• supplying, by a second RF power supply, a bias RF signal having a second RF frequency to a lower electrode of the substrate support;
• repeating
• supplying the source RF signal to the upper electrode to generate plasma in the plasma processing chamber in a state in which a magnetic field is generated by an electromagnet in the plasma processing chamber and depositing a deposit on the substrate;
• and
• supplying the source RF signal to the upper electrode to generate plasma in the plasma processing chamber in a state in which a magnetic field is generated by the electromagnet in the plasma processing chamber and etching the substrate,
• wherein a power level of the source RF signal in the etching the substrate is lower than a power level of the source RF signal in the depositing the deposit on the substrate.