Semiconductor process device including electromagnet for controlling plasma

A semiconductor process device comprising:

• a chamber;
• a gas supplier configured to supply a reactant gas into the chamber;
• a first plasma electrode disposed in the chamber;
• a second plasma electrode disposed in the chamber and spaced apart from the first plasma electrode in a first direction;
• an electromagnet configured to generate a magnetic field component to control a density of a plasma region that is formed between the first and second plasma electrodes;
• and
• a current supplier configured to supply a current to the electromagnet,
• wherein the electromagnet is disposed inside the chamber,
• wherein a center region of the plasma region is affected by the electromagnet and has a first diameter in a second direction that is perpendicular to the first direction, and
• wherein the electromagnet has a second diameter less than or equal to the first diameter in the second direction.

A semiconductor process device comprising:

• a chamber;
• a gas supplier configured to supply a reactant gas into the chamber;
• a first plasma electrode disposed in the chamber;
• a second plasma electrode disposed in the chamber and spaced apart from the first plasma electrode;
• a plurality of electromagnets configured to generate a plurality of magnetic field components, respectively, to control a density of a plasma region that is formed between the first plasma electrode and second plasma electrode;
• and
• a current supplier configured to supply a plurality of currents to the plurality of electromagnets, respectively,
• wherein a first electromagnet of the plurality of electromagnets is disposed between the plasma region and remaining electromagnets of the plurality of electromagnets,
• wherein a center region of the plasma region is affected by the first electromagnet, and
• wherein the first electromagnet overlaps the center region of the plasma region.