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US 12,676,292 B2Granted
Target processing device and target processing method
AssigneeKioxia Corporation
InventorsTakeharu Motokawa, Noriko Sakurai, Hideaki Sakurai
Life of this patent
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Abstract
A target processing method includes: importing a target into a processing chamber; forming a film including carbon on the target using at least one of first ion including carbon and a first plasma including carbon; and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed a number of times in the processing chamber without removing the target from the processing chamber.
Claims8
A target processing device comprising:
- a processing chamber;
- a first supply source configured to supply at least one of a first ion including carbon or a first gas including carbon;
- a second supply source configured to generate a second plasma from a second gas;
- a transport unit configured to convey a target into the processing chamber;
- and
- a control device configured to alternately perform a number of times a first operation of forming a film including carbon on the target disposed in the processing chamber using at least one of the first ion and a first plasma generated from the first gas and a second operation of removing the film by a chemical reaction between the second plasma and the film, while controlling the first and second supply sources and without removing the target from the processing chamber,
- wherein the first supply source includes an arc ion source that generates the first ion by arc discharge and introduces the first ion into the processing chamber.
4 more elements
A target processing device comprising:
- a processing chamber;
- a first supply source configured to supply at least one of a first ion including carbon or a first gas including carbon;
- a second supply source configured to generate a second plasma from a second gas;
- a transport unit configured to convey a target into the processing chamber;
- and
- a control device configured to alternately perform a number of times a first operation of forming a film including carbon on the target disposed in the processing chamber using at least one of the first ion and a first plasma generated from the first gas and a second operation of removing the film by a chemical reaction between the second plasma and the film, while controlling the first and second supply sources and without removing the target from the processing chamber,
- wherein the first operation is performed by locating a ferromagnetic body below the target, the ferromagnetic body having unipolarity in a direction substantially parallel to a bottom surface of the target.
4 more elements
Dependencies are inferred from the claim text.