Method of manufacturing a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsEn-Ping Lin, Yu-Ling Ko, I-Chung Wang, Yi-Jen Chen, Sheng-Kai Jou, Chih-Teng Liao
Life of this patent
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Abstract
In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- preparing a p-type region and an n-type region over a substrate, the p-type region including a SiGe layer and the n-type region including a Si layer;
- forming a hard mask layer over the SiGe layer and the Si layer;
- patterning the hard mask layer to form a hard mask pattern;
- patterning the SiGe layer and the Si layer to form fin structures by using an electron cyclotron resonance (ECR) plasma etching apparatus using the hard mask pattern as an etching mask, wherein:
- the ECR plasma etching apparatus generates an ECR zone, and
- the ECR zone is moved during the patterning the SiGe layer and the Si layer.
A method of manufacturing a semiconductor device, comprising:
- etching a first region of a substrate to form a recess in the substrate;
- forming an epitaxial layer in the recess;
- forming a hard mask layer over the first region and a second region of the substrate;
- patterning the hard mask layer to form a hard mask pattern;
- patterning the first region of the substrate and the second region of the substrate to form one or more fin structures in each region by using an electron cyclotron resonance (ECR) plasma etching apparatus using the hard mask pattern as an etching mask, wherein:
- the ECR plasma etching apparatus generates an ECR zone, and
- the ECR zone is moved during the patterning the first and second regions of the substrate.
A method of manufacturing a semiconductor device, comprising:
- forming a recess in a first region of a substrate;
- forming an epitaxial layer in the recess;
- forming a first hard mask layer over the first region and a second region of the substrate;
- patterning the hard mask layer to form a hard mask pattern;
- etching the first region of the substrate and the second region of the substrate to form one or more fin structures in each region by using an electron cyclotron resonance (ECR) plasma etching apparatus using the hard mask pattern as an etching mask, wherein:
- the ECR plasma etching apparatus includes a first coil and a second coil,
- the second coil is located closer to the substrate than the first coil, and
- during the etching, an input current to the second coil is changed two or more times.
Dependencies are inferred from the claim text.