G11C 5/08
For interconnecting magnetic elements
Official title: for interconnecting magnetic elements, e.g. toroidal cores
G11C5/08 (For interconnecting magnetic elements) appears on 53 US grants and 62 published applications in this corpus.
Search patents in G11C- Granted patents
- 53
- Published applications
- 62
- Assignees
- 23
- Inventors
- 127
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2008 | 0 | 1 |
| 2009 | 1 | 1 |
| 2010 | 0 | 0 |
| 2011 | 1 | 1 |
| 2012 | 1 | 3 |
| 2013 | 3 | 5 |
| 2014 | 3 | 2 |
| 2015 | 5 | 6 |
| 2016 | 7 | 4 |
| 2017 | 4 | 2 |
| 2018 | 1 | 3 |
| 2019 | 3 | 4 |
| 2020 | 5 | 4 |
| 2021 | 4 | 1 |
| 2022 | 1 | 1 |
| 2023 | 0 | 6 |
| 2024 | 2 | 3 |
| 2025 | 5 | 9 |
| 2026 | 7 | 6 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Storage device8 Sep 2026US 12,733,404 B2Kioxia Corporation
- Magnetic memory devices18 Aug 2026US 12,713,837 B2Samsung Electronics Co., Ltd.
- Magnetic memory28 Jul 2026US 12,694,911 B2Kioxia Corporation
- Magnetic memory16 Jun 2026US 12,658,220 B2Kioxia Corporation
- Magnetoresistance effect element and magnetic recording array for enhanced integration density19 May 2026US 12,633,331 B2TDK Corporation
- Semiconductor device including memory structure and method for manufacturing the same1 Oct 2026US 2026/0301779 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetoresistance effect element and magnetic memory24 Sep 2026US 2026/0293531 A1TDK Corporation
- Storage device10 Sep 2026US 2026/0271304 A1Kioxia Corporation
- Semiconductor device and manufacturing method thereof2 Apr 2026US 2026/0094624 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device26 Feb 2026US 2026/0057915 A1Kioxia Corporation
Most cited
By later US patents
- Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations18US 9,117,495 B2Unity Semiconductor Corporation · 2015
- Magnetic random access memory (MRAM) layout with uniform pattern13US 8,441,850 B2QUALCOMM Incorporated · 2013
- Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations13US 9,390,796 B2Unity Semiconductor Corporation · 2016
- Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations11US 9,691,480 B2Unity Semiconductor Corporation · 2017
- Word line control for improving read and write margins9US 7,558,145 B2Infineon Technologies AG · 2009