Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi Ching ONG, KUO-CHING HUANG, Yu-Sheng CHEN
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Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a logic block and a p-bit block. The logic block includes a plurality of plurality of logic elements. The p-bit block includes a transistor, a first bit cell with a magnetic structure and at least one second bit cell with a resistance structure. The first bit cell with the magnetic structure is connected to one end of the transistor. The at least one second bit cell with the resistance structure is connected to another end of the transistor.
Claims20
A semiconductor device, comprising:
- a logic block, including a plurality of plurality of logic elements;
- a p-bit block, including:
- a transistor;
- a first bit cell with a magnetic structure connected to one end of the transistor;
- and
- at least one second bit cell with a resistance structure connected to another end of the transistor.
A semiconductor device, comprising:
- a plurality of logic elements;
- and
- at least one transistor, which is a CMOS transistor having a source and a drain;
- a first bit cell, connected to one of the source and the drain, wherein the first bit cell is a Magnetic Tunnel Junction (MTJ) element;
- and
- at least one second bit cell, connected to another one of the source and the drain, wherein the at least one second bit cell is a resistor, and the first bit cell and the at least one second bit cell are co-existed in a semiconductor structure.
A manufacturing method of a semiconductor device, comprising:
- forming a transistor;
- and
- forming a first bit cell with a magnetic structure connected to one end of the transistor and at least one second bit cell with a resistance structure connected to another end of the transistor.
Dependencies are inferred from the claim text.