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US 12,713,837 B2Granted
Magnetic memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKyungil Hong, Junghwan Park, Gyuwon Kim, Yeonho Choi
Life of this patent
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Abstract
A magnetic memory device may include a substrate, an data storage pattern disposed on the substrate, and a lower contact plug between the substrate and the data storage pattern, the lower contact plug may include a lower insulating pattern, a lower contact pattern on the lower insulating pattern, and a lower barrier pattern extending along a lower surface and a side surface of the lower insulating pattern and a side surface of the lower contact pattern.
Claims20
A magnetic memory device comprising:
- a substrate;
- a data storage pattern on the substrate;
- and
- a lower contact plug between the substrate and the data storage pattern,
- wherein the lower contact plug includes:
- a lower insulating pattern on the substrate;
- a lower contact pattern above the lower insulating pattern;
- and
- a lower barrier pattern extending on a lower surface and a side surface of the lower insulating pattern and a side surface of the lower contact pattern,
- wherein the lower barrier pattern extends at least on a portion of the side surface of the lower contact pattern that is above an uppermost surface of the lower insulating pattern.
7 more elements
A magnetic memory device comprising:
- a substrate;
- an interlayer insulating layer on the substrate;
- a lower contact plug in the interlayer insulating layer;
- and
- a data storage pattern on the interlayer insulating layer and the lower contact plug,
- wherein the lower contact plug includes:
- a lower barrier pattern on the substrate, wherein side surfaces of the lower barrier pattern are in contact with the interlayer insulating layer;
- a lower insulating pattern on the lower barrier pattern, wherein lower surfaces and side surfaces of the lower insulating pattern are in contact with the lower barrier pattern;
- and
- a lower contact pattern on the lower insulating pattern,
- wherein a lower surface of the lower contact pattern is in contact with the lower insulating pattern,
- wherein a side surface of the lower contact pattern is in contact with the lower barrier pattern, and
- wherein the lower barrier pattern extends on at least a portion of the side surface of the lower contact pattern that is above an uppermost surface of the lower insulating pattern.
10 more elements
A magnetic memory device comprising:
- a substrate;
- a lower wiring on the substrate;
- a lower contact plug on the lower wiring, wherein the lower contact plug is connected to the lower wiring;
- a data storage pattern including a lower electrode, a magnetic tunnel junction pattern, and an upper electrode sequentially stacked on the lower contact plug;
- and
- an upper wiring disposed on the data storage pattern, wherein the upper wiring is connected to the data storage pattern,
- wherein the lower contact plug includes a lower metal pattern and a lower insulating pattern,
- wherein the lower metal pattern surrounds the lower insulating pattern,
- wherein the lower metal pattern extends between the lower insulating pattern and the lower wiring to be in contact with the lower wiring,
- wherein the lower metal pattern comprises a lower contact pattern and a lower barrier pattern, and
- wherein the lower barrier pattern extends at least on a portion of a side surface of the lower contact pattern that is above an uppermost surface of the lower insulating pattern.
8 more elements
Dependencies are inferred from the claim text.