G11C 5/063
Voltage and signal distribution in integrated semi-conductor memory access lines
Official title: {Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay}
G11C5/063 (Voltage and signal distribution in integrated semi-conductor memory access lines) appears on 3,284 US grants and 3,802 published applications in this corpus.
Search patents in G11C- Granted patents
- 3,284
- Published applications
- 3,802
- Assignees
- 421
- Inventors
- 5,090
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 5 | 0 |
| 1981 | 4 | 0 |
| 1982 | 5 | 0 |
| 1983 | 9 | 0 |
| 1984 | 6 | 0 |
| 1985 | 6 | 0 |
| 1986 | 5 | 0 |
| 1987 | 4 | 0 |
| 1988 | 6 | 0 |
| 1989 | 6 | 0 |
| 1990 | 2 | 0 |
| 1991 | 8 | 0 |
| 1992 | 9 | 0 |
| 1993 | 4 | 0 |
| 1994 | 13 | 0 |
| 1995 | 14 | 0 |
| 1996 | 10 | 0 |
| 1997 | 13 | 0 |
| 1998 | 23 | 0 |
| 1999 | 32 | 0 |
| 2000 | 43 | 0 |
| 2001 | 67 | 25 |
| 2002 | 66 | 73 |
| 2003 | 55 | 58 |
| 2004 | 62 | 66 |
| 2005 | 51 | 84 |
| 2006 | 60 | 94 |
| 2007 | 80 | 112 |
| 2008 | 82 | 102 |
| 2009 | 76 | 113 |
| 2010 | 93 | 99 |
| 2011 | 92 | 90 |
| 2012 | 90 | 95 |
| 2013 | 120 | 122 |
| 2014 | 127 | 134 |
| 2015 | 126 | 135 |
| 2016 | 171 | 119 |
| 2017 | 136 | 114 |
| 2018 | 117 | 127 |
| 2019 | 130 | 163 |
| 2020 | 184 | 231 |
| 2021 | 213 | 227 |
| 2022 | 159 | 214 |
| 2023 | 174 | 256 |
| 2024 | 182 | 247 |
| 2025 | 217 | 277 |
| 2026 | 124 | 425 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device having 2-transistor vertical memory cell and a common plate29 Sep 2026US 12,751,272 B2Micron Technology, Inc.
- Three-dimensional memory array and preparation method thereof22 Sep 2026US 12,744,062 B2Peking University
- Apparatus and methods for modifying impedances in time-based vector-matrix multiplication circuits15 Sep 2026US 12,738,322 B2SanDisk Technologies LLC
- Multi-port static random-access memory (SRAM) with buffered read port and p and n pass gates to same write bit line8 Sep 2026US 12,731,637 B2Aril Computer Corporation
- Elongated capacitors in 3D NAND memory devices8 Sep 2026US 12,731,642 B2Micron Technology, Inc.
- Memory device and method for manufacturing the same8 Oct 2026US 2026/0311729 A1Macronix International Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor memory device including a bit line mask pattern8 Oct 2026US 2026/0313871 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Segmented column memory array801US 5,315,541 ASunDisk Corporation · 1994
- Semiconductor memory device with dummy word line/sense amplifier activation436US 4,435,793 ATokyo Shibaura Denki Kabushiki Kaisha · 1984
- Datapath architecture for high area efficiency428US 7,054,178 B1Etron Technology, Inc. · 2006
- Semiconductor device and data processing system418US 8,351,292 B2Elpida Memory, Inc. · 2013
- Integrated circuit I/O using high performance bus interface325US 5,319,755 ARambus Inc. · 1994