G11C 29/844
By splitting the decoders in stages
Official title: {by splitting the decoders in stages}
G11C29/844 (By splitting the decoders in stages) appears on 71 US grants and 46 published applications in this corpus.
Search patents in G11C- Granted patents
- 71
- Published applications
- 46
- Assignees
- 32
- Inventors
- 141
- Latest grant
- 26 Aug 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 0 |
| 2002 | 2 | 2 |
| 2003 | 4 | 2 |
| 2004 | 0 | 1 |
| 2005 | 2 | 4 |
| 2006 | 6 | 4 |
| 2007 | 2 | 3 |
| 2008 | 3 | 3 |
| 2009 | 3 | 1 |
| 2010 | 1 | 1 |
| 2011 | 1 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 1 | 0 |
| 2016 | 1 | 1 |
| 2017 | 1 | 0 |
| 2018 | 1 | 3 |
| 2019 | 2 | 1 |
| 2020 | 1 | 2 |
| 2021 | 1 | 0 |
| 2022 | 3 | 11 |
| 2023 | 5 | 2 |
| 2024 | 6 | 2 |
| 2025 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Memory device26 Aug 2025US 12,399,644 B2National Tsing Hua University
- Memory device with failed main bank repair using redundant bank18 Feb 2025US 12,229,028 B2Yangtze Memory Technologies Co., Ltd.
- Apparatuses and methods for skipping wordline activation of defective memory during refresh operations31 Dec 2024US 12,183,382 B2Micron Technology, Inc.
- Memory device2 Apr 2024US 11,947,828 B2National Tsing Hua University
- Memory device with failed main bank repair using redundant bank19 Mar 2024US 11,934,281 B2Yangtze Memory Technologies Co., Ltd.
- Memory device23 Oct 2025US 2025/0328274 A1National Tsing Hua University
- Memory device13 Jun 2024US 2024/0192882 A1National Tsing Hua University
- Memory device with failed main bank repair using redundant bank9 May 2024US 2024/0152435 A1Yangtze Memory Technologies Co., Ltd.
- Memory device for column repair18 May 2023US 2023/0154559 A1Samsung Electronics Co., Ltd.
- Self-repair for sequential sram2 Mar 2023US 2023/0065591 A1Meta Platforms Technologies, LLC
Most cited
By later US patents
- Register-based redundancy circuit and method for built-in self-repair in a semiconductor memory device86US 5,920,515 AAdvanced Micro Devices, Inc. · 1999
- Flash memory array partitioning architectures56US 6,614,685 B2Multi Level Memory Technology · 2003
- Redundant semiconductor memory device using a single now address decoder for driving both sub-wordlines and redundant sub-wordlines45US 5,848,006 ANEC Corporation · 1998
- Semiconductor memory having a redundancy judgment circuit42US 6,269,034 B1NEC Corporation · 2001
- Semiconductor memory device36US 4,849,938 AMitsubishi Denki Kabushiki Kaisha · 1989