Memory device with failed main bank repair using redundant bank

A system, comprising:

• a memory device configured to store data, the memory device comprising:
• an array of memory cells comprising P groups of banks, each group of banks comprising N main banks and a redundant bank such that P redundant banks in the P groups of banks, respectively, are included in and shared by the P groups of banks, where each of P and N is a positive integer with P>1;
• an input/output (I/O) circuit coupled to the P groups of banks and configured to direct P×N pieces of data to or from P×N working banks, respectively;
• and
• I/O control logic coupled to the I/O circuit and configured to:
• determine the P×N working banks from the P groups of banks based on bank fail information indicative of K failed main banks from the P groups of banks, the P×N working banks comprising K redundant banks of the P redundant banks, where K is a positive integer not greater than P;
• and
• control the I/O circuit to direct P×N pieces of data to or from the P×N working banks, respectively;
• and
• a memory controller coupled to the memory device and configured to control the memory device.