G11C 2211/5648
Multilevel memory programming, reading or erasing operations wherein the order or sequence
Official title: Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
G11C2211/5648 (Multilevel memory programming, reading or erasing operations wherein the order or sequence) appears on 413 US grants and 426 published applications in this corpus.
Search patents in G11C- Granted patents
- 413
- Published applications
- 426
- Assignees
- 65
- Inventors
- 555
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 2 | 0 |
| 2004 | 0 | 2 |
| 2005 | 2 | 3 |
| 2006 | 2 | 7 |
| 2007 | 10 | 9 |
| 2008 | 9 | 10 |
| 2009 | 3 | 9 |
| 2010 | 10 | 14 |
| 2011 | 7 | 10 |
| 2012 | 18 | 11 |
| 2013 | 15 | 14 |
| 2014 | 13 | 20 |
| 2015 | 32 | 20 |
| 2016 | 28 | 33 |
| 2017 | 34 | 25 |
| 2018 | 27 | 21 |
| 2019 | 20 | 33 |
| 2020 | 32 | 35 |
| 2021 | 29 | 31 |
| 2022 | 29 | 27 |
| 2023 | 26 | 42 |
| 2024 | 36 | 27 |
| 2025 | 22 | 15 |
| 2026 | 7 | 8 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Asymmetric pass through voltage for reduction of cell-to-cell interference11 Aug 2026US 12,704,969 B2Micron Technology, Inc.
- Memory device and method of erasure operations using GIDL and negative wordline voltages14 Jul 2026US 12,682,958 B2SK hynix Inc.
- Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory2 Jun 2026US 12,646,570 B2Silicon Motion, Inc.
- Memory device, memory system, and program operation method thereof26 May 2026US 12,638,981 B2Yangtze Memory Technologies Co., Ltd.
- Nonvolatile memory devices and methods of controlling wordline erase operations within sub-blocks of memory strings12 May 2026US 12,626,765 B2Samsung Electronics Co., Ltd.
- Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory17 Sep 2026US 2026/0279460 A1Silicon Motion, Inc.
- Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory17 Sep 2026US 2026/0279461 A1Silicon Motion, Inc.
- Non-volatile memory with 1.5 pass programming6 Aug 2026US 2026/0229289 A1SanDisk Technologies LLC
- Memory system, control method thereof, and program30 Jul 2026US 2026/0221202 A1Kioxia Corporation
- Memory system and method of controlling the same14 May 2026US 2026/0134928 A1Kioxia Corporation
Most cited
By later US patents
- Compensating for coupling during read operations of non-volatile memory657US 7,196,928 B2SanDisk Corporation · 2007
- Semiconductor memory device for storing multivalued data301US 6,657,891 B1Kabushiki Kaisha Toshiba · 2003
- Data management for multi-bit-per-cell memories235US 6,532,556 B1Multi Level Memory Technology · 2003
- Semiconductor memory device for storing multivalued data102US 7,016,226 B2Kabushiki Kaisha Toshiba · 2006
- Multiple level programming in a non-volatile memory device89US 7,221,592 B2Micron Technology, Inc. · 2007