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US 2026/0229289 A1Published application
Non-volatile memory with 1.5 pass programming
AssigneeSanDisk Technologies LLC
InventorsWei CAO, Jiahui YUAN, Xiang YANG
Life of this patent
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Abstract
To increase the speed of programming, a non-volatile memory system programs some word lines using a two pass programming process and other word lines using a one pass programming process.
Claims20
A non-volatile storage apparatus, comprising:
- a first set of non-volatile memory cells;
- a second set of non-volatile memory cells;
- a first set of word lines connected to the first set of non-volatile memory cells;
- a second set of word lines connected to the second set of non-volatile memory cells, the first set of word lines is intermingled with the second set of word lines;
- and
- a control circuit connected to the first set of non-volatile memory cells, the second set of non-volatile memory cells, the first set of word lines and the second set of word lines;
- the control circuit is configured to program the first set of non-volatile memory cells connected to the first set of word lines using a two pass programming process and program the second set of non-volatile memory cells connected to the second set of word lines using a one pass programming process.
4 more elements
A method, comprising:
- programming non-volatile memory cells connected to a first word line using a two pass programming process;
- programming non-volatile memory cells connected to a second word line using a one pass programming process;
- and
- programming non-volatile memory cells connected to a third word line using a two pass programming process, the second word line is positioned between the first word line and the third word line.
1 more element
A non-volatile storage apparatus, comprising:
- non-volatile memory cells arranged in blocks;
- word lines connected to the non-volatile memory cells;
- and
- means for programming non-volatile memory cells of a first block that are connected to a first subset of the word lines using a one pass programming process and programming non-volatile memory cells of the first block that are connected to a second subset of the word lines using a two pass programming process.
1 more element
Dependencies are inferred from the claim text.