Data management for multi-bit-per-cell memories
AssigneeMulti Level Memory Technology
InventorsSau Ching Wong, Hock Chuen So
Life of this patent
Estimating the term…
Loading patent…
AssigneeMulti Level Memory Technology
InventorsSau Ching Wong, Hock Chuen So
Estimating the term…
A multi-bit-per-cell memory reduces the effect of defects and data errors by scrambling data bits before writing data. The scrambling prevents storage of consecutive bits in the same memory cell. When a memory cell is defective or produces an error, the bits read from the memory cell do not create consecutive bit errors that would be noticeable or uncorrectable. An error or a defect in a multi-bit memory cell causes at most scattered bit errors. Scramblers in multi-bit-per-cell memories can include 1) hardwired lines crossing between an input port and an output port, 2) programmable wiring options, 3) a linear buffer where reads from the buffer use addresses with swapped bits, or 4) a buffer array that switches between incrementing a row address first and incrementing a column address first when accessing memory cells in the buffer array.
A multi-bit-per-cell memory comprising:
A method for writing data to a multi-bit-per-cell memory, comprising:
A multi-bit-per-cell memory comprising:
Dependencies are inferred from the claim text.