Asymmetric pass through voltage for reduction of cell-to-cell interference

A method comprising:

• initiating, by a processing device, a read operation to read a set of target memory cells of a target wordline of a memory device;
• causing, during the read operation, a read voltage level to be applied to the target wordline;
• causing, during application of the read voltage level to the target wordline, a first pass through voltage level to be applied to a first unselected wordline adjacent to the target wordline on a drain side of the target wordline;
• and
• causing, during application of the read voltage level to the target wordline, a second pass through voltage level to be applied to a second unselected wordline adjacent to the target wordline on a source side of the target wordline, wherein the first pass through voltage level is less than the second pass through voltage level, and wherein the first pass through voltage level is less than the second pass through voltage level during application of each of a plurality of different read voltage levels to the target wordline.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• initiating a read operation to read a set of target memory cells of a target wordline of a memory device;
• causing, during the read operation, a read voltage level to be applied to the target wordline;
• causing, during application of the read voltage level to the target wordline, a first pass through voltage level to be applied to a first unselected wordline adjacent to the target wordline on a drain side of the target wordline;
• and
• causing, during application of the read voltage level to the target wordline, a second pass through voltage level to be applied to a second unselected wordline adjacent to the target wordline on a source side of the target wordline, wherein the first pass through voltage level is less than the second pass through voltage level, and wherein the first pass through voltage level is less than the second pass through voltage level during application of each of a plurality of different read voltage levels to the target wordline.