G11C 2029/5002
Characteristic
Official title: {Characteristic}
G11C2029/5002 (Characteristic) appears on 753 US grants and 726 published applications in this corpus.
Search patents in G11C- Granted patents
- 753
- Published applications
- 726
- Assignees
- 229
- Inventors
- 1,469
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 8 | 0 |
| 1998 | 5 | 0 |
| 1999 | 11 | 0 |
| 2000 | 6 | 0 |
| 2001 | 4 | 2 |
| 2002 | 12 | 8 |
| 2003 | 13 | 23 |
| 2004 | 34 | 43 |
| 2005 | 31 | 42 |
| 2006 | 30 | 28 |
| 2007 | 31 | 46 |
| 2008 | 34 | 26 |
| 2009 | 24 | 22 |
| 2010 | 29 | 20 |
| 2011 | 16 | 11 |
| 2012 | 16 | 22 |
| 2013 | 18 | 36 |
| 2014 | 30 | 31 |
| 2015 | 37 | 25 |
| 2016 | 27 | 27 |
| 2017 | 33 | 27 |
| 2018 | 32 | 33 |
| 2019 | 32 | 22 |
| 2020 | 34 | 41 |
| 2021 | 45 | 44 |
| 2022 | 33 | 50 |
| 2023 | 37 | 46 |
| 2024 | 48 | 32 |
| 2025 | 25 | 11 |
| 2026 | 10 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method to calculate performance of a magnetic element comprising a ferromagnetic layer exchange-coupled to an antiferromagnetic layer25 Aug 2026US 12,716,970 B2Allegro MicroSystems, LLC
- Heat dissipation in resistive memories11 Aug 2026US 12,707,903 B2Virginia Tech Intellectual Properties, Inc.
- Optimization method and apparatus for program/erase voltage of charge-trap memory devices through 3D trap analysis26 May 2026US 12,640,227 B1Korea University Research and Business Foundation
- Methods for optimizing semiconductor device placement on a substrate for improved performance, and associated systems and methods12 May 2026US 12,626,731 B2Micron Technology, Inc.
- Error correction for identifier data generated from unclonable characteristics of resistive memory12 May 2026US 12,626,759 B1Crossbar, Inc.
- Switch and hold biasing for memory cell imprint recovery6 Aug 2026US 2026/0229268 A1Micron Technology, Inc.
- Method, system, device, and storage medium for determining wck-on value of lpddr chip30 Jul 2026US 2026/0221212 A1Shenzhen Rayson Technology Co., Ltd.
- Defect detection method for memory device2 Jul 2026US 2026/0188406 A1Powerchip Semiconductor Manufacturing Corporation
- Testing method for memory device18 Jun 2026US 2026/0171179 A1Powerchip Semiconductor Manufacturing Corporation
- Flash memory quality grading method, flash memory quality grading apparatus, and non-transitory computer-readable storage medium14 May 2026US 2026/0134936 A1Hosin Global Electronics Co., LTD
Most cited
By later US patents
- High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates827US 5,867,429 ASanDisk Corporation · 1999
- Memory with isolatable expandable bit lines211US 5,677,867 A1997
- Tracking capacitive loads180US 8,605,523 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- Synchronous memory test system118US 5,995,424 ATanisys Technology, Inc. · 1999
- Device architecture and process for improved vertical memory arrays88US 6,930,324 B2Infineon Technologies AG · 2005