G11C 2029/4002
Comparison of products, i.e. test results of chips or with golden chip
Official title: {Comparison of products, i.e. test results of chips or with golden chip}
G11C2029/4002 (Comparison of products, i.e. test results of chips or with golden chip) appears on 86 US grants and 88 published applications in this corpus.
Search patents in G11C- Granted patents
- 86
- Published applications
- 88
- Assignees
- 44
- Inventors
- 186
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 3 |
| 2005 | 2 | 1 |
| 2006 | 1 | 4 |
| 2007 | 5 | 5 |
| 2008 | 4 | 7 |
| 2009 | 7 | 3 |
| 2010 | 4 | 2 |
| 2011 | 2 | 3 |
| 2012 | 3 | 1 |
| 2013 | 0 | 0 |
| 2014 | 4 | 5 |
| 2015 | 3 | 3 |
| 2016 | 2 | 1 |
| 2017 | 2 | 5 |
| 2018 | 4 | 1 |
| 2019 | 0 | 2 |
| 2020 | 5 | 6 |
| 2021 | 2 | 5 |
| 2022 | 7 | 12 |
| 2023 | 12 | 8 |
| 2024 | 7 | 5 |
| 2025 | 6 | 3 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Test circuit and semiconductor memory system including the test circuit21 Apr 2026US 12,609,178 B2SK hynix Inc.
- Nonvolatile memory device including wordline leakage current detector, storage device including the same, and method of operating the same10 Feb 2026US 12,548,632 B2Samsung Electronics Co., Ltd.
- Nonvolatile memory package, storage device including the same, and method of operating thereof4 Nov 2025US 12,462,857 B2Samsung Electronics Co., Ltd.
- In-situ detection of anomalies in integrated circuits using machine learning models20 May 2025US 12,307,747 B2Intel Corporation
- Storage device for generating identity code and identity code generating method25 Mar 2025US 12,260,917 B2Macronix International Co., Ltd.
- Semiconductor memory device4 Jun 2026US 2026/0155194 A1SK hynix Inc.
- Silicon Wafer-Scale System, Repair Method Thereof, and Electronic Device7 May 2026US 2026/0129998 A1Huawei Technologies Co., Ltd.
- Temperature sensor implemented with a magnetoresistive random access memory (mram)16 Apr 2026US 2026/0105980 A1NXP USA, Inc.
- Storage device including nonvolatile memory and memory controller and operating method of storage device25 Dec 2025US 2025/0391488 A1Samsung Electronics Co., Ltd.
- Nonvolatile memory device including wordline leakage current detector, storage device including the same, and method of operating the same17 Apr 2025US 2025/0124995 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- In-line voltage contrast determination of tunnel oxide weakness in integrated circuit technology development81US 7,101,722 B1Advanced Micro Devices, Inc. · 2006
- Semiconductor memory device having a coincidence detection circuit and its test method74US 5,521,870 ANEC Corporation · 1996
- Apparatus and method for testing memory cards49US 7,184,916 B2Cray Inc. · 2007
- Runtime-competitive fault handling for reconfigurable logic devices21US 7,389,460 B1University of Central Florida Research Foundation, Inc. · 2008
- Apparatus for dynamically repairing a semiconductor memory13US 6,879,530 B2Micron Technology, Inc. · 2005