Nonvolatile memory device including wordline leakage current detector, storage device including the same, and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBuil Nam, Jinsun Yeom
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Abstract
A nonvolatile memory device includes a memory cell array including a plurality of memory cells connected to a plurality of wordlines and a plurality of bitlines, a row decoder configured to select one of the plurality of wordlines in response to an address, and a wordline leakage current detector configured to determine whether the selected wordline is defective using trim information related to a level of a reference voltage or a gradient of a detect voltage during a test operation, wherein the trim information is stored internally in an electrical die sorting (EDS) process.
Claims20
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of memory cells connected to a plurality of wordlines and a plurality of bitlines;
- a row decoder configured to select one of the plurality of wordlines in response to an address;
- and
- a wordline leakage current detector configured to determine whether the selected wordline is defective using trim information related to a level of a reference voltage or a gradient of a detect voltage during a test operation,
- wherein the trim information is stored internally in an electrical die sorting (EDS) process.
A method of operating a nonvolatile memory device including a core chip having memory blocks connected to wordlines and bitlines and a peripheral chip disposed below the core chip and having a wordline leakage current detector, the method comprising:
- extracting trim information related to a level of a reference voltage of the wordline leakage current detector or a gradient of detected voltage of the wordline leakage current detector for each chip in an electrical die sorting (EDS) process;
- and
- testing leakage of a target wordline among the wordlines in a test operation using the trim information.
A storage device, comprising:
- at least one nonvolatile memory device;
- and
- a controller configured to control the at least one nonvolatile memory device,
- wherein the at least one nonvolatile memory device includes:
- a memory cell array including a plurality of memory cells connected to a plurality of wordlines and a plurality of bitlines;
- and
- a wordline leakage current detector configured to determine whether the selected wordline among the plurality of wordlines is defective using trim information related to a level of a reference voltage or a gradient of detected voltage during a test operation.
Dependencies are inferred from the claim text.