G11C 16/3459
Circuits or methods to verify correct programming of nonvolatile memory cells
Official title: {Circuits or methods to verify correct programming of nonvolatile memory cells}
G11C16/3459 (Circuits or methods to verify correct programming of nonvolatile memory cells) appears on 3,583 US grants and 3,611 published applications in this corpus.
Search patents in G11C- Granted patents
- 3,583
- Published applications
- 3,611
- Assignees
- 269
- Inventors
- 2,956
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 9 | 0 |
| 1995 | 15 | 0 |
| 1996 | 20 | 0 |
| 1997 | 26 | 0 |
| 1998 | 37 | 0 |
| 1999 | 41 | 0 |
| 2000 | 55 | 0 |
| 2001 | 46 | 21 |
| 2002 | 50 | 45 |
| 2003 | 40 | 72 |
| 2004 | 39 | 54 |
| 2005 | 54 | 71 |
| 2006 | 69 | 72 |
| 2007 | 84 | 109 |
| 2008 | 85 | 78 |
| 2009 | 76 | 53 |
| 2010 | 52 | 64 |
| 2011 | 57 | 62 |
| 2012 | 70 | 76 |
| 2013 | 80 | 81 |
| 2014 | 98 | 117 |
| 2015 | 107 | 122 |
| 2016 | 180 | 166 |
| 2017 | 180 | 165 |
| 2018 | 179 | 169 |
| 2019 | 196 | 217 |
| 2020 | 254 | 245 |
| 2021 | 218 | 237 |
| 2022 | 244 | 301 |
| 2023 | 224 | 293 |
| 2024 | 265 | 300 |
| 2025 | 252 | 235 |
| 2026 | 163 | 186 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Memory, operation method thereof, and memory system6 Oct 2026US 12,755,801 B2Yangtze Memory Technologies Co., Ltd.
- Memory device, memory system including the same, and operating method of the memory device29 Sep 2026US 12,749,535 B2Samsung Electronics Co., Ltd.
- Memory device and method of operating the memory device29 Sep 2026US 12,749,539 B2SK hynix Inc.
- Semiconductor memory device and operating method thereof29 Sep 2026US 12,749,545 B2SK hynix Inc.
- Advanced dummy word line ramp down after program verify for memory devices8 Oct 2026US 2026/0311778 A1SanDisk Technologies LLC
- Semiconductor device, operating method thereof, and in-memory computing apparatus8 Oct 2026US 2026/0311779 A1CCSH Corporation
- Semiconductor device and operation method thereof, system, and electronic device8 Oct 2026US 2026/0311780 A1CCSH Corporation
- Operating method of memory device8 Oct 2026US 2026/0311781 A1SK hynix Inc.
- Selective use of a word line monitoring procedure for reliability-risk word lines8 Oct 2026US 2026/0311782 A1Micron Technology, Inc.
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states791US 6,522,580 B2SanDisk Corporation · 2003
- Variable programming of non-volatile memory725US 7,020,017 B2SanDisk Corporation · 2006
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998
- Flash eeprom system602US 5,297,148 ASunDisk Corporation · 1994