Memory device and method of operating the memory device

A method of operating a memory device, the memory device including a plurality of memory cells connected to at least one of a plurality of word lines, the at least one of the plurality of word lines being a selected word line, and a plurality of page buffers connected to the plurality of memory cells through a plurality of bit lines, the method comprising:

• applying a program voltage to the selected word line;
• setting precharge data for precharging a first bit line connected to a memory cell corresponding to a first program state among the plurality of bit lines in a first page buffer connected to the first bit line among the plurality of page buffers while the program voltage is applied to the selected word line;
• applying a verify voltage for verifying the first program state to the selected word line;
• precharging the first bit line through the first page buffer based on the precharge data;
• and
• after sensing a current or voltage of the first bit line, setting, in a page buffer connected to a second bit line among the plurality of bit lines, precharge data for the second bit line.

A memory device, comprising:

• a plurality of memory cells each connected to at least one of a plurality of word lines, the at least one of the plurality of word lines being a selected word line, and programmed to any one of a plurality of program states;
• a plurality of page buffers connected to the plurality of memory cells through a plurality of bit lines and configured to store data sensed from the plurality of memory cells;
• and
• control logic configured to control a first page buffer connected to a first bit line among a plurality of bit lines among the plurality of page buffers to set first precharge data used to determine a precharge voltage of the first bit line while a program voltage is applied to the selected word line, and after sensing a current or voltage of the first bit line, control a page buffer connected to a second bit line among the plurality of bit lines to set second precharge data used to determine a precharge voltage of the second bit line.