G11C 13/0097
Erasing
Official title: {Erasing, e.g. resetting, circuits or methods}
G11C13/0097 (Erasing) appears on 927 US grants and 906 published applications in this corpus.
Search patents in G11C- Granted patents
- 927
- Published applications
- 906
- Assignees
- 154
- Inventors
- 1,177
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 3 |
| 2005 | 1 | 3 |
| 2006 | 4 | 3 |
| 2007 | 3 | 4 |
| 2008 | 4 | 10 |
| 2009 | 4 | 11 |
| 2010 | 5 | 12 |
| 2011 | 18 | 28 |
| 2012 | 15 | 24 |
| 2013 | 30 | 46 |
| 2014 | 48 | 70 |
| 2015 | 75 | 67 |
| 2016 | 101 | 99 |
| 2017 | 125 | 103 |
| 2018 | 91 | 78 |
| 2019 | 91 | 85 |
| 2020 | 91 | 76 |
| 2021 | 72 | 56 |
| 2022 | 44 | 37 |
| 2023 | 34 | 36 |
| 2024 | 33 | 20 |
| 2025 | 23 | 15 |
| 2026 | 13 | 20 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method and apparatus for initializing resistive random access memory and electronic device6 Oct 2026US 12,755,786 B2Xiamen Industrial Technology Research Institute Co., Ltd.
- Techniques for multi-level chalcogenide memory cell programming11 Aug 2026US 12,706,142 B2Micron Technology, Inc.
- Memory device and method of erasure operations using GIDL and negative wordline voltages14 Jul 2026US 12,682,958 B2SK hynix Inc.
- Resistive random access memory (RRAM) architecture and method30 Jun 2026US 12,670,954 B2GLOBALFOUNDRIES U. S. Inc.
- Nonvolatile memory devices and methods of controlling wordline erase operations within sub-blocks of memory strings12 May 2026US 12,626,765 B2Samsung Electronics Co., Ltd.
- In-memory computing architecture and operating method thereof24 Sep 2026US 2026/0290452 A1Peking University
- Programming circuit, integrated circuit, and method27 Aug 2026US 2026/0252869 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device comprising electro-chemical layer, method for manufacturing memory device and method for driving memory device30 Jul 2026US 2026/0223374 A1Samsung Electronics Co., Ltd.
- Three-dimensional vertical nonvolatile memory device including memory cell strings, method of driving the same, and electronic apparatus including the same18 Jun 2026US 2026/0173378 A1Samsung Electronics Co., Ltd.
- 3d memory device and method of implementing multi-level memory using the same11 Jun 2026US 2026/0164678 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Memory cells, memory cell arrays, methods of using and methods of making215US 8,194,451 B2Zeno Semiconductor, Inc. · 2012
- Memory cells, memory cell arrays, methods of using and methods of making169US 8,654,583 B2Zeno Semiconductor, Inc. · 2014
- Memory cells, memory cell arrays, methods of using and methods of making154US 8,531,881 B2Zeno Semiconductor, Inc. · 2013
- Memory cells, memory cell arrays, methods of using and methods of making154US 8,995,186 B2Zeno Semiconductors, Inc. · 2015
- Memory cells, memory cell arrays, methods of using and methods of making115US 9,679,648 B2Zeno Semiconductor, Inc. · 2017