Memory cells, memory cell arrays, methods of using and methods of making

A method of operating a memory cell having a floating body for storing, reading and writing data as volatile memory, and a nonvolatile memory for storing data, the method comprising:

• reading and storing data to the floating body while power is applied to the memory cell;
• biasing a substrate terminal connected to a substrate of said memory cell to operate said memory cell as a silicon rectifier device in a conducting operation when said floating body has a first data state, but wherein a blocking operation results when said floating body has a second data state;
• and
• transferring the data stored in the floating body to the nonvolatile memory when power to the cell is interrupted.

A method of operating a semiconductor storage device comprising a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory, and a resistance change element for storing data as non-volatile memory, the method comprising:

• reading and storing data to the floating bodies as volatile memory while power is applied to the device;
• biasing a substrate terminal connected to a substrate of said memory cell to operate said memory cell as a silicon rectifier device in a conducting operation when said floating body has a first data state, but wherein a blocking operation results when said floating body has a second data state;
• transferring the data stored in the floating bodies, by a parallel, non-algorithmic process, to the resistance change elements corresponding to the floating bodies, when power to the device is interrupted;
• and
• storing the data in the resistance change elements as non-volatile memory.