G11C 13/0064
Verifying circuits or methods
Official title: {Verifying circuits or methods}
G11C13/0064 (Verifying circuits or methods) appears on 928 US grants and 933 published applications in this corpus.
Search patents in G11C- Granted patents
- 928
- Published applications
- 933
- Assignees
- 150
- Inventors
- 1,170
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 7 |
| 2004 | 6 | 18 |
| 2005 | 9 | 8 |
| 2006 | 13 | 15 |
| 2007 | 13 | 9 |
| 2008 | 9 | 22 |
| 2009 | 19 | 44 |
| 2010 | 22 | 62 |
| 2011 | 56 | 69 |
| 2012 | 61 | 56 |
| 2013 | 67 | 55 |
| 2014 | 64 | 77 |
| 2015 | 90 | 57 |
| 2016 | 83 | 82 |
| 2017 | 84 | 45 |
| 2018 | 45 | 53 |
| 2019 | 69 | 61 |
| 2020 | 55 | 39 |
| 2021 | 55 | 40 |
| 2022 | 32 | 29 |
| 2023 | 17 | 27 |
| 2024 | 30 | 22 |
| 2025 | 17 | 22 |
| 2026 | 10 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device of the phase-change type and method for reading such a device25 Aug 2026US 12,718,880 B2STMicroelectronics International N. V.
- Method of operating phase change memories, corresponding device and computer program product21 Jul 2026US 12,688,886 B2STMicroelectronics International N. V.
- Memory device storing a first, second, and third bit26 May 2026US 12,640,201 B2Kioxia Corporation
- Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods14 Apr 2026US 12,603,128 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Pulse based multi-level cell programming7 Apr 2026US 12,597,450 B2Micron Technology, Inc.
- Pulse based multi-level cell programming6 Aug 2026US 2026/0229261 A1Micron Technology, Inc.
- Resistive random-access memory (reram) configured for overcoming the affects of read disturb30 Jul 2026US 2026/0221185 A1Weebit Nano Ltd.
- Mechanisms for programming multilevel memory devices with variable memory windows30 Jul 2026US 2026/0221186 A1TetraMem Inc.
- Resistive memory with enhanced redundancy writing25 Jun 2026US 2026/0179684 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive random-access memory structure and method21 May 2026US 2026/0141950 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Memory device134US 6,768,157 B2Advanced Micro Devices, Inc. · 2004
- Memory device with active and passive layers115US 6,858,481 B2Advanced Micro Devices, Inc. · 2005
- Memory device113US 6,864,522 B2Advanced Micro Devices, Inc. · 2005
- Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell111US 8,179,711 B2Samsung Electronics Co., Ltd. · 2012