G11C 2013/0066
Verify correct writing whilst writing is in progress
Official title: {Verify correct writing whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cell and using the detector output to terminate writing}
G11C2013/0066 (Verify correct writing whilst writing is in progress) appears on 200 US grants and 188 published applications in this corpus.
Search patents in G11C- Granted patents
- 200
- Published applications
- 188
- Assignees
- 69
- Inventors
- 353
- Latest grant
- 28 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 1 | 1 |
| 2004 | 0 | 3 |
| 2005 | 2 | 1 |
| 2006 | 3 | 5 |
| 2007 | 3 | 1 |
| 2008 | 2 | 2 |
| 2009 | 1 | 6 |
| 2010 | 2 | 5 |
| 2011 | 9 | 11 |
| 2012 | 6 | 7 |
| 2013 | 4 | 6 |
| 2014 | 10 | 9 |
| 2015 | 13 | 12 |
| 2016 | 23 | 25 |
| 2017 | 30 | 19 |
| 2018 | 18 | 19 |
| 2019 | 18 | 17 |
| 2020 | 18 | 10 |
| 2021 | 19 | 10 |
| 2022 | 5 | 5 |
| 2023 | 6 | 4 |
| 2024 | 3 | 1 |
| 2025 | 4 | 6 |
| 2026 | 0 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method for operating memory cell and resistive random access memory, and electronic device28 Oct 2025US 12,456,516 B2Institute of Microelectronics, Chinese Academy of Sciences
- First fire operation for ovonic threshold switch selector17 Jun 2025US 12,334,147 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory circuit structure and method of operating memory circuit structure25 Mar 2025US 12,260,911 B2Institute of Microelectronics, Chinese Academy of Sciences
- Memory device21 Jan 2025US 12,205,642 B2Kioxia Corporation
- Differential programming of two-terminal memory with program detection and multi-path disablement26 Nov 2024US 12,154,624 B2Crossbar, Inc.
- Resistive random-access memory structure and method21 May 2026US 2026/0141950 A1GLOBALFOUNDRIES U. S. Inc.
- Writing circuit16 Apr 2026US 2026/0105957 A1United Microelectronics Corp.
- Erase algorithm for non-volatile memory defining a weak program state as an erase state4 Dec 2025US 2025/0372166 A1Crossbar, Inc.
- First fire operation for ovonic threshold switch selector4 Sep 2025US 2025/0279138 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for operating memory cell and resistive random access memory, and electronic device21 Aug 2025US 2025/0266089 A1Institute of Microelectronics, Chinese Academy of Sciences
Most cited
By later US patents
- Adaptive programming technique for a re-writable conductive memory device85US 7,054,183 B2Unity Semiconductor Corporation · 2006
- Memory device and method for sensing while programming a non-volatile memory cell82US 6,574,145 B2Matrix Semiconductor, Inc. · 2003
- Adaptive programming technique for a re-writable conductive memory device80US 6,940,744 B2Unity Semiconductor Corporation · 2005
- Programming of programmable resistive memory devices66US 7,224,598 B2Hewlett-Packard Development Company, L. P. · 2007
- Semiconductor memory device and method for programming and erasing a memory cell61US 7,006,371 B2Sharp Kabushiki Kaisha · 2006