Method for operating memory cell and resistive random access memory, and electronic device

A method for operating a memory cell, the memory cell comprising:

• a resistive device;
• the method comprising:
• performing a writing operation on the resistive device, wherein the writing operation comprises:
• applying a first voltage for writing on the resistive device;
• determining whether a resistance value of the resistive device reaches a low resistance state threshold during a period of applying a writing voltage;
• and
• applying a constant current to the resistive device in response to the resistance value of the resistive device reaching the low resistance state threshold, wherein a voltage value generated by the constant current on the resistive device is smaller than a voltage value of the first voltage,
• wherein the method further comprises:
• performing an erasing operation on the resistive device, wherein the erasing operation comprises:
• applying a second voltage for erasing on the resistive device;
• determining whether a resistance value of the resistive device reaches a reference resistance value during a period of applying an erasing voltage;
• and
• applying a constant voltage to the resistive device in response to the resistance value of the resistive device reaching the reference resistance value, wherein a voltage value of the constant voltage is smaller than a voltage value of the second voltage.