Memory circuit structure and method of operating memory circuit structure

A memory circuit structure, comprising:

• a storage array, wherein the storage array comprises at least two storage units;
• a decoder connected with a bit line and a word line of the storage array, and configured to select a specific storage unit in a specific row and a specific column for operation;
• a programming circuit configured to generate a voltage pulse or a constant current pulse;
• a polarity switching circuit connected with the programming circuit, and configured to implement a switching between a voltage programming and a current programming of the programming circuit under a set operation and a reset operation;
• a detection circuit connected with the storage array, and configured to detect a detection signal of a current or a voltage corresponding to the specific storage unit in the storage array and feed back the detection signal to a control unit, wherein the detection signal output by the detection circuit is configured to enable the polarity switching circuit to switch;
• and
• the control unit configured to, according to the detection signal, control the polarity switching circuit to perform a switching operation and control a pulse output of the programming circuit.