Writing circuit
AssigneeUnited Microelectronics Corp.
InventorsChung-Hao Chen, Cheng-Hsiao Lai
Life of this patent
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Abstract
A writing circuit includes a writing voltage generator, a reference voltage provider, and a comparison circuit. The writing voltage generator generates a writing voltage to perform a writing operation on each resistive memory cell among a resistive memory cell array. The reference voltage provider, during the writing operation, generates and provides a reference voltage according to a resistance of a reference device. The comparing circuit generates a comparison result by comparing the reference voltage with a target value. The writing voltage generator adjusts a maintenance time of the writing voltage according to the comparison result.
Claims20
A writing circuit, comprising:
- a writing voltage generator, providing a writing voltage to each of a plurality of resistive memory cells among a resistive memory cell array to perform a writing operation;
- a reference voltage provider, generating and providing a reference voltage according to a resistance value of a reference element during the writing operation;
- and
- a comparison circuit, generating a comparison result by comparing the reference voltage with a target value,
- wherein the writing voltage generator adjusts a maintaining time of the writing voltage according to the comparison result.
A writing circuit, comprising:
- a writing voltage generator, providing a writing voltage to each of a plurality of resistive memory cells among a resistive memory cell array to perform a writing operation;
- and
- a comparison circuit, generating a comparison result by comparing a voltage on a source line of each of the plurality of resistive memory cells with a threshold voltage,
- wherein the writing voltage generator adjusts a maintaining time of the writing voltage according to the comparison result.
Dependencies are inferred from the claim text.