Memory device and method for sensing while programming a non-volatile memory cell

A method for simultaneously programming a plurality of memory cells along a wordline, the method comprising:

• (a) simultaneously programming a plurality of memory cells along a wordline, the memory cells being part of a memory array comprising a plurality of layers of memory cells stacked vertically above one another in a single chip;
• (b) while programming the plurality of memory cells, independently determining whether each memory cell is in a programmed state;
• and
• (c) if a memory cell of the plurality of memory cells is determined to be in the programmed state, terminating the programming of the memory cell.

A method for programming a memory cell, the method comprising:

• (a) programming a memory cell;
• (b) while programming the memory cell, determining whether the memory cell is in a programmed state;
• and
• (c) if the memory cell is determined to be in the programmed state, terminating the programming of the memory cell;
• wherein the programming of the memory cell is terminated at a time after the memory cell is determined to be in the programmed state.

A memory device comprising:

• a memory cell;
• and
• a detection circuit operative to detect, while the memory cell is being programmed, when the memory cell is in a programmed state;
• wherein the detection circuit is further operative to terminate the programming of the memory cell at a time after the memory cell is determined to be in the programmed state.

A method for simultaneously programming a plurality of memory cells along a wordline, the method comprising:

• (a) simultaneously programming a plurality of memory cells along a wordline;
• (b) while programming the plurality of memory cells, independently determining whether each memory cell is in a programmed state;
• and
• (c) if a memory cell of the plurality of memory cells is determined to be in the programmed state, terminating the programming of the memory cell;
• wherein the programming of the memory cell is terminated at a time after the memory cell is determined to be in the programmed state.