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US 7,224,598 B2Granted
Programming of programmable resistive memory devices
AssigneeHewlett-Packard Development Company, L.P.
InventorFrederick A. Perner
Life of this patent
Estimating the term…
Abstract
Programming of a programmable resistive memory device includes supplying programming power to the device; generating feedback as to when the device has been programmed; and removing the programming power when the feedback indicates that the device has been programmed.
Claims8
Apparatus for programming selected memory devices in a resistive cross point array of programmable resistive memory devices, the apparatus comprising:
- a pre-amplifier for applying a programming potential to a selected one of the memory devices while applying an array potential to other ones of the memory devices, the array and programming potentials being about equal, whereby equipotential isolation of the selected memory device is achieved;
- and
- a circuit for turning off the programming potential when a sense current flowing through the selected memory device indicates that the selected memory device has been programmed.
Dependencies are inferred from the claim text.